NDLI: Improvement in the light output power of GaN-based light emitting diodes by one-step current blocking design

Content Provider	IEEE Xplore Digital Library
Author	Tsai, C.F. Su, Y.K. Lin, C.L.
Copyright Year	2009
Description	Author affiliation: Department of Electronic Engineering, Kun-Shan University, Yung-Kang City, Tainan 710, Taiwan, R.O.C. (Lin, C.L.) \|\| Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University Tainan 701, Taiwan, R.O.C. (Su, Y.K.) \|\| Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, No. 1 University Road, Tainan 701, Taiwan, R.O.C. (Tsai, C.F.)
Abstract	GaN-based wide bandgap semiconductors have recently attracted considerable interests, in terms of applications for optoelectronic devices, which operate in the blue, green, and ultraviolet (UV) wavelength regions [1]. A general configuration of GaN-based LEDs is that both n- and p-type pads are formed on the same side of the LED chip due to the insulating sapphire substrates. In such a structure, the p electrode is located in the middle of the light path, some loss of light is inevitable as a result of photon absorption near the p-pad [2]. Therefore, in order to increase the light output of GaN-based LEDs, the issue of light absorption at p-pad will be important. Recently, several current blocking (CB) methods that could enhance the light output of LEDs have been demonstrated as follows: using CF gases plasma-treatment to p-GaN under p-pad for current blocking [3]; forming and varying the number and size of blocking-holes in the shortest current path between p-pad and n-pad [4]; inserting an insulator in p-GaP layer under p-pad for the current blocking application of AlGaInP-based material system [5]; localized Ti deposition associated with indium-zinc-oxide (IZO) was proposed to serve as a Schottky current blocking layer for the vertical-structure GaN-based LEDs [6]; the activation of Mg-doped p-GaN using a Ni film as the catalyst to form the selective high resistivity region (SHRR) as the purpose of current blocking [7], etc. In this article, through the one-step selective area current blocking design without additional steps to form current blocking structure as above mentioned in the literature, we could define a Schottky contact region under the p-pad to avoid spontaneous emission beneath the opaque p-pad, thus enhancing an additional current injection into the effective active layers of the LED, thereby significantly increasing the light output power.
Starting Page	1
Ending Page	2
File Size	684903
Page Count	2
File Format	PDF
ISBN	9781424460304
DOI	10.1109/ISDRS.2009.5378200
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-12-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Light emitting diodes Indium tin oxide Power generation Microelectronics Cities and towns Absorption Plasma applications Schottky barriers Chemicals Educational institutions
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Enhanced Output Power of GaN-Based Resonance Cavity Light-Emitting Diodes With Optimized ITO Design

Current Spreading and Blocking Designs for Improving Light Output Power from the Vertical-Structured GaN-Based Light-Emitting Diodes

Performance enhancements in optoelectrical properties of InGaN/GaN light-emitting diodes with micro-hole arrayed indium-tin-oxide layer

Visible and infrared electroluminescence from Er-doped GaN Schottky diodes

Performance Simulation of Organic Light-Emitting Diodes

Light Output Enhancement of GaN-Based Light-emitting Diodes with Oblique Indium-Tin Oxide Nanorod Array

Transparent contact to p-GaN: indium tin oxide/titanium nitride

ZnO for homojunction light emitting diodes and transparent conductors

Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes

Improvement in the light output power of GaN-based light emitting diodes by one-step current blocking design

Similar Documents

Enhanced Output Power of GaN-Based Resonance Cavity Light-Emitting Diodes With Optimized ITO Design

Current Spreading and Blocking Designs for Improving Light Output Power from the Vertical-Structured GaN-Based Light-Emitting Diodes

Performance enhancements in optoelectrical properties of InGaN/GaN light-emitting diodes with micro-hole arrayed indium-tin-oxide layer

Visible and infrared electroluminescence from Er-doped GaN Schottky diodes

Performance Simulation of Organic Light-Emitting Diodes

Light Output Enhancement of GaN-Based Light-emitting Diodes with Oblique Indium-Tin Oxide Nanorod Array

Transparent contact to p-GaN: indium tin oxide/titanium nitride

ZnO for homojunction light emitting diodes and transparent conductors

Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes

Improvement in the light output power of GaN-based light emitting diodes by one-step current blocking design