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Content Provider | IEEE Xplore Digital Library |
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Author | Nawaz, M. Permthamassin, K. Zaring, C. Willander, M. |
Copyright Year | 2001 |
Description | Author affiliation: Ericsson Microelectron. AB, Stockholm, Sweden (Nawaz, M.) |
Abstract | Using self-consistent two dimensional numerical simulation (LASTIP), the layer structure of the laser diodes is optimized. A ridge waveguide structure with GaInAs/GaAs and GaInAs/GaInAsP active regions has been simulated. The influence of the well numbers and waveguide thicknesses on the threshold current is studied. Compared to GaInAs/GaAs, GaInAs/GaInAsP active region suffers from larger spread in the threshold current due to nonuniformities in the carrier density with increasing quantum wells. Simulations have been performed for different temperatures and at different cavity lengths. |
Sponsorship | IEEE |
Starting Page | 289 |
Ending Page | 292 |
File Size | 339835 |
Page Count | 4 |
File Format | |
ISBN | 0780374320 |
DOI | 10.1109/ISDRS.2001.984497 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2001-12-05 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | ISDRS-Univ of Maryland |
Subject Keyword | Gallium arsenide Laser excitation Laser theory Pump lasers Threshold current Optical materials Quantum well lasers Temperature Optical computing Erbium-doped fiber lasers |
Content Type | Text |
Resource Type | Article |
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