NDLI: Conductivity of MgO-doped LiNbO/sub 3/ crystals

Content Provider	IEEE Xplore Digital Library
Author	Frangulian, T.S. Pichugin, V.F. Yakovlev, V.Yu. Kim, I.W.
Copyright Year	2000
Description	Author affiliation: Polytech.. Univ., Tomsk, Russia (Frangulian, T.S.)
Abstract	Congruent LiNbO/sub 3/ (LN) and LiNbO/sub 3/+MgO (MLN) crystals belong to the materials with high initial concentration of antisite defects. These defects are charged positively with respect to the lattice, act as deep electron traps and play very important role in electronic processes. Introduction of MgO-impurity in LiNbO/sub 3/ change the concentration of these states and alteration in conductivity is expected. The conductivity of samples was studied in relation with MgO content. Information about spectrum of localized states was obtained by optical measurements and method of cathodoluminescence. Observed luminescence has noninertial character and their spectrum shifts to the realm of low energies with grows in MgO content. The data demonstrate essential change in density of states associated with antisite defects. Analysis shows that at low temperature the most probable mechanism of charge-transfer in LN and MLN crystals is hopping of small polarons.
Starting Page	78
Ending Page	83
File Size	517018
Page Count	6
File Format	PDF
ISBN	0780364864
DOI	10.1109/KORUS.2000.865926
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-06-27
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Crystals Impurities Doping Temperature Conductivity measurement Optical sensors Absorption Equations Electron traps Aggregates
Content Type	Text
Resource Type	Article

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