NDLI: Structural and Optical Properties of Axial and Radial Heterostructure Ill-V Nanowires Grown by Metalorganic Chemical Vapour Deposition

Content Provider	IEEE Xplore Digital Library
Author	Joyce, H.J. Kim, Y. Gao, Q. Tan, H.H. Jagadish, C.
Copyright Year	2006
Description	Author affiliation: Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia, Email: hjj109@rsphysse.anu.edu.au (Joyce, H.J.)
Abstract	We have investigated the structural properties and photoluminescence of novel axial and radial heterostructure III-V nanowires, fabricated by metalorganic chemical vapour deposition. Segments of InGaAs have been incorporated within GaAs nanowires, to create axial heterostructure nanowires which exhibit strong photoluminescence. Photoluminescence is observed from radial heterostructure nanowires (core-shell nanowires), consisting of GaAs cores with AlGaAs shells. Core-multishell nanowires, of GaAs cores clad in several alternating layers of thick AlGaAs barrier shells and thin GaAs quantum well shells, exhibit a blue-shifted photoluminescence peak arising from quantum confinement effects.
Starting Page	710
Ending Page	711
File Size	1198946
Page Count	2
File Format	PDF
ISBN	1424400775
DOI	10.1109/NANO.2006.247753
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-07-17
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nanowires Chemical vapor deposition Gallium arsenide Indium gallium arsenide Substrates Gold Photoluminescence Nanoparticles MOCVD Image segmentation photoluminescence nanowire GaAs AlGaAs InGaAs heterostucture
Content Type	Text
Resource Type	Article

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