NDLI: Studies of doped nanocrystalline diamond films grown by parallel bias-enhanced CVD

Content Provider	IEEE Xplore Digital Library
Author	De Jesus, J. Weiner, B.R. Morell, G. Gonzalez, J.A.
Copyright Year	2003
Description	Author affiliation: Puerto Rico Univ., Rio Piedras, USA (De Jesus, J.; Weiner, B.R.; Morell, G.)
Abstract	The transformations induced by the application of a continuous bias voltage parallel to the growing surface during the sulfur-assisted hot-filament chemical vapor deposition (HFCVD) of nanocrystalline diamond (n-D) films were investigated by Raman spectroscopy (RS), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The films were deposited on molybdenum substrates using CH/sub 4/, H/sub 2/ and H/sub 2/S. Bias voltages in the range of 0-800 V DC were applied parallel to the substrate surface continuously during deposition. The study revealed a significant improvement in the films' density and a lowering in the defect density of the nanocrystalline diamond structure for parallel bias (PB) voltages above 400 V. These high PB conditions cause the preferential removal of electrons from the gaseous environment, thus leading to the net accumulation of positive species in the volume above the growing film, which enhances the secondary nucleation. The nanoscale carbon nuclei self-assemble into carbon nano-clusters with diameters in the range of tens of nanometers, which contain diamond (sp/sup 3/-bonded C) in their cores and graphitic (sp/sup 2/-bonded C) enclosures. Hence, the observed improvement in film density and in atomic arrangement appears to be connected to the enhanced presence of positively charged ionic species, consistent with models which propose that positively charged carbon species are the crucial precursors for CVD diamond film growth.
Sponsorship	IEEE Nanotechnol. Council IEEE Region 6 Western USA
Starting Page	480
Ending Page	483
File Size	478379
Page Count	4
File Format	PDF
ISBN	0780379764
DOI	10.1109/NANO.2003.1230950
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-08-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Voltage Spectroscopy Atomic force microscopy Scanning electron microscopy Diamond-like carbon Raman scattering Photoelectron microscopy Substrates Chemical vapor deposition Atomic layer deposition
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Electron emission from heavily nitrogen (N)-doped polycrystalline, homo, and heteroepitaxial CVD diamond

Heteroepitaxial Growth of 3C-SiC Thin Films on Si (100) Substrates by Single Source Chenical Vapor Deposition for MEMS Applications

Effects of graphene defects on gas sensing properties towards NO₂ detection

High-Power-Density Plasma Deposition of Diamond-Like Carbons Films

Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition: Preprint

DLC Coating by HiPIMS: The Influence of Substrate Bias Voltage

Plasma treatment effects on hydrogenated amorphous carbon films prepared by plasma-enhanced chemical vapor deposition

Deposition of Diamond Films in a Closed Hot Filament CVD System.

Diamond like carbon ( DLC ) thin films : Preparation and Characterization

Studies of doped nanocrystalline diamond films grown by parallel bias-enhanced CVD

Similar Documents

Electron emission from heavily nitrogen (N)-doped polycrystalline, homo, and heteroepitaxial CVD diamond

Heteroepitaxial Growth of 3C-SiC Thin Films on Si (100) Substrates by Single Source Chenical Vapor Deposition for MEMS Applications

Effects of graphene defects on gas sensing properties towards NO2 detection

High-Power-Density Plasma Deposition of Diamond-Like Carbons Films

Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition: Preprint

DLC Coating by HiPIMS: The Influence of Substrate Bias Voltage

Plasma treatment effects on hydrogenated amorphous carbon films prepared by plasma-enhanced chemical vapor deposition

Deposition of Diamond Films in a Closed Hot Filament CVD System.

Diamond like carbon ( DLC ) thin films : Preparation and Characterization

Studies of doped nanocrystalline diamond films grown by parallel bias-enhanced CVD

Effects of graphene defects on gas sensing properties towards NO₂ detection