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Content Provider | IEEE Xplore Digital Library |
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Author | Bo-Jr Huang Huei Wang Kun-You Lin |
Copyright Year | 2009 |
Description | Author affiliation: Dept. of Electrical Engineering and Graduate Institute of Communication Engineering, National Taiwan University, 1 Roosevelt Road, Sec. 4, 10617 Taipei, Taiwan, R. O. C. (Bo-Jr Huang; Huei Wang; Kun-You Lin) |
Abstract | In this paper, a miniature Q-band low noise amplifier (LNA) is demonstrated using 0.130-µm CMOS technology. The triple-cascode topology is utilized to achieve a high gain performance with a compact size. In addition, two inductors are placed between the cascode devices to reduce the noise and enhance the stability of the LNA. The LNA presents a maximum small signal gain of 12.6 dB and a minimum noise figure of 4 dB at 38 GHz, with a power consumption of 24 mW. The chip size is only 0.42 × 0.6 $mm^{2},$ including all the testing pads. To the best of our knowledge, this is the first triple-cascode LNA in millimeter-wave (MMW) regime reported to date. |
Starting Page | 677 |
Ending Page | 680 |
File Size | 308618 |
Page Count | 4 |
File Format | |
ISBN | 9781424428038 |
ISSN | 0149645X |
DOI | 10.1109/MWSYM.2009.5165787 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2009-06-07 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Topology CMOS technology Low-noise amplifiers Performance gain Inductors Noise reduction Stability Noise figure Energy consumption Testing MMIC Low noise amplifier cascode CMOS |
Content Type | Text |
Resource Type | Article |
Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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