NDLI: Plasma charging damage in SOI technology

Content Provider	IEEE Xplore Digital Library
Author	Mocuta, A.C. Hook, T.B. Chou, A.I. Wagner, T. Stamper, A.K. Khare, M. Gambino, J.P.
Copyright Year	2001
Description	Author affiliation: IBM Microelectron., Hopewell Junction, NY, USA (Mocuta, A.C.)
Abstract	SOI MOSFET devices have proven very robust to plasma process induced gate oxide damage. In this work, we demonstrate that SOI devices with very large antenna ratios may be successfully fabricated without damage, provided that asymmetry of charging is not intentionally introduced, no connection is made to the wafer bulk, and that the integrity of the buried oxide is maintained.
Sponsorship	American Vacuum Soc.
Starting Page	104
Ending Page	107
File Size	415894
Page Count	4
File Format	PDF
ISBN	096515775X
DOI	10.1109/PPID.2001.929989
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-05-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Plasma devices Silicon on insulator technology Plasma sources Crystallization Implants Microelectronics MOSFET circuits Robustness Dielectric devices Wire
Content Type	Text
Resource Type	Article

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Plasma charging damage in SOI technology