NDLI: Comparison of DC and RF sputtered aluminium-doped zinc oxide for photovoltaic applications

Content Provider	IEEE Xplore Digital Library
Author	Isherwood, P.J.M. Gona, M. Bowers, J.W. Neves, N. Newbatt, P. Walls, J.M.
Copyright Year	2015
Description	Author affiliation: Innovnano SA, Coimbra, Portugal (Neves, N.; Newbatt, P.) \|\| CREST, Loughborough Univ., Loughborough, UK (Isherwood, P.J.M.; Gona, M.; Bowers, J.W.; Walls, J.M.)
Abstract	AZO was sputter deposited using both RF and DC power supplies from a pre-formed ceramic AZO target with a 2 wt % aluminium oxide dopant concentration. The target was formed by hot pressing pre-doped nanoparticles produced using an emulsion detonation synthesis technique. AZO films were found to display good optical and electrical properties regardless of deposition technique. Increased temperatures above 200 °C were found to have a negative impact on the electrical properties, with a corresponding increase in infrared transmission. Visible transmission was found to be good (above 79 %) for all films except those deposited using DC power at room temperature. The DC sputtering process was stable and was found to approximately double the deposition rate with no corresponding drop in film quality for films deposited at moderate temperatures. This makes DC deposition more industrially attractive when process temperature is not a concern. For room temperature depositions, RF was found to produce superior transmission and electrical characteristics.
Starting Page	1
Ending Page	5
File Size	820499
Page Count	5
File Format	PDF
e-ISBN	9781479979448
DOI	10.1109/PVSC.2015.7355900
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radio frequency Temperature Sputtering Conductivity Zinc oxide Films Temperature measurement conductive films Wide band gap semiconductors II–VI semiconductor materials thin films
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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