NDLI: Forward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells (for space power)

Content Provider	IEEE Xplore Digital Library
Author	Michael, S. Cypranowski, C. Anspaugh, B.
Copyright Year	1990
Description	Author affiliation: Dept. of Electr. & Comput. Eng., US Naval Postgraduate Sch., Monterey, CA, USA (Michael, S.; Cypranowski, C.)
Abstract	The preliminary results of a novel approach to low-temperature annealing of previously irradiated indium phosphide and gallium arsenide solar cells are reported. The technique is based on forward-biased current annealing. The two types of III-V semiconductor solar cells were irradiated with 1 MeV electrons to a fluence level of (1-10)*10/sup 14/ electrons/cm/sup 2/. Several annealing attempts were made, varying all conditions. Optimum annealing was achieved when cells were injected with minority currents at a constant 90 degrees C. The current density for each type of cell was also determined. Significant recovery of degraded parameters was achieved in both cases. However, the InP cell recovery notably exceeded the recovery in GaAs cells. The recovery is thought to be caused by current stimulated reordering of the radiator-induced displacement damage. Both types of cell were then subjected to several cycles of irradiation and annealing. The results were also very promising. The significant recovery of degraded cell parameters at low temperature might play a major role in considerably extending the end of life of future spacecraft power supplies.
Starting Page	1178
Ending Page	1183
File Size	395032
Page Count	6
File Format	PDF
DOI	10.1109/PVSC.1990.111801
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-05-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Degradation Indium phosphide Photovoltaic cells Electrons Indium gallium arsenide III-V semiconductor materials Current density Gallium arsenide Temperature
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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