NDLI: Noise Characterization of 130 nm and 90 nm CMOS Technologies for Analog Front-end Electronics

Content Provider	IEEE Xplore Digital Library
Author	Manghisoni, M. Ratti, L. Re, V. Speziali, V. Traversi, G.
Copyright Year	2006
Description	Author affiliation: Dipt. di Ingegneria Industriale, Universita di Bergamo, Dalmine (Manghisoni, M.)
Abstract	Deep-submicron complementary MOS processes have made the development of ASICs for HEP instrumentation possible. In the last few years CMOS commercial technologies of the quarter micron node have been extensively used in the design of the readout electronics for highly granular detection systems in the particle physics environment. IC designers are now moving to 130 nm CMOS technologies, or even to the next technology node, to implement readout integrated circuits for silicon strip and pixel detectors, in view of future HEP applications. In order to evaluate how scaling down of the device features affects their performances, continuous technology monitoring is mandatory. In this work the results of signal and noise measurements carried out on CMOS devices in 130 nm and 90 nm commercial processes are presented. Data obtained from the measurements provide a powerful tool to establish design criteria in nanoscale CMOS processes for detector front-ends and can be used to evaluate the resolution limits achievable for low-noise charge sensitive amplifiers in the 100-nm minimum feature size range.
Starting Page	214
Ending Page	218
File Size	422285
Page Count	5
File Format	PDF
ISBN	1424405602
ISSN	10957863
DOI	10.1109/NSSMIC.2006.356142
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-29
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS technology Integrated circuit technology Application specific integrated circuits CMOS integrated circuits Detectors CMOS process Instruments Readout electronics Silicon Strips noise Front-end electronics deep submicron CMOS
Content Type	Text
Resource Type	Article

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