NDLI: A CMOS circuit for high-stability X-ray spectroscopy with silicon drift detectors with on-chip JFET

Content Provider	IEEE Xplore Digital Library
Author	Fiorini, C. Frizzi, T. Longoni, A. Porro, M.
Copyright Year	2005
Description	Author affiliation: Dipt. di Elettronica e Informazione, Politecnico di Milano, Milan, Italy (Fiorini, C.; Frizzi, T.; Longoni, A.)
Abstract	We propose a CMOS circuit designed to be used with silicon drift detectors (SDDs) for high-resolution and high peak stability X-ray spectroscopy. The circuit is developed in the framework of a project for researches on 'exotic atoms' (e.g. kaonic hydrogen) at e/sup -//e/sup +/ colliders. The circuit is composed by a low-noise charge preamplifier and by a 6th order semiGaussian shaping amplifier with four selectable peaking times from 0.7 /spl mu/s up to 3 /spl mu/s. The preamplifier operates with the input JFET directly integrated on the detector itself. A low-frequency current-mode feedback loop allows to stabilize the operating point of the input JFET with respect to background and leakage current variations. The feedback capacitor is integrated on the detector and its value is not known precisely in advance. The preamplifier is designed with the possibility to adjust externally its decay time to match the fixed time constant of the pole/zero network. A baseline holder senses the baseline voltage shifts at the output of the circuits due to the DC changes of the drain voltage of the input JFET in correspondence of background variations and provides a feedback loop back to the preamplifier to stabilize the output baseline. A bipolar shaping provides a timing signal required by the experiment. A first prototype has been realized in the 0.35 /spl mu/m AMS technology. The energy resolution measured using the chip with a SDD of 5 mm/sup 2/ is of 137 eV at 6 keV (ENC = 8e/sup -/ rms).
Starting Page	901
Ending Page	903
File Size	138194
Page Count	3
File Format	PDF
ISBN	0780392213
ISSN	10957863
DOI	10.1109/NSSMIC.2005.1596400
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-23
Publisher Place	Puerto Rico
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Spectroscopy Silicon X-ray detection X-ray detectors JFET circuits Preamplifiers Feedback loop Voltage Circuit stability Hydrogen
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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