NDLI: Implementation of second-order nonlinearities in semiconductor waveguides

Content Provider	IEEE Xplore Digital Library
Author	Hutchings, D.C. Kelaidis, C. Amoid, J.M. Aitchison, J.S. Ironside, C.N. Street, M. Marsh, J.H.
Copyright Year	1994
Description	Author affiliation: Dept. of Electron. & Electr. Eng., Glasgow Univ., UK (Hutchings, D.C.; Kelaidis, C.; Amoid, J.M.; Aitchison, J.S.; Ironside, C.N.; Street, M.; Marsh, J.H.)
Abstract	Semiconductors are known to exhibit large second-order nonlinearities. However, efficient generation of new frequencies has not been possible due to the difficulties of phase-matching as zinc-blende semiconductors do not exhibit birefringence and typically have a large dispersion in the near infrared. One possible quasi phase-matching scheme for second harmonic generation in semiconductors is to use a refractive index grating. However, the generation efficiency of such schemes is poor and Bragg scattering can increase losses. In addition, the high symmetry of zinc-blende semiconductors only gives one non-zero /spl chi//sup (2)/ tensor element and therefore restricts the choice of potential device geometries. By breaking the symmetry of the structure, additional (and potentially enhanced) /spl chi//sup (2)/ tensor elements can be generated. One particularly promising method for achieving this is to grow asymmetric quantum well structures. The technique the authors propose for the near infrared is quantum well intermixing to remove the induced asymmetry. The most promising technique in GaAs/AlGaAs systems is impurity-free vacancy disordering (IFVD) due to the low optical losses. Disordering is realised by depositing an SiO/sub 2/ cap on the material and then annealing in a rapid thermal processor. Selectivity across the wafer is achieved by placing a layer of SrF/sub 2/ between the SiO/sub 2/ and the semiconductor in regions where intermixing is not required. The spatial resolution of the process is more than adequate to define gratings with a pitch /spl sim/4 /spl mu/m.
Starting Page	148
Ending Page	150
File Size	223083
Page Count	3
File Format	PDF
ISBN	0780314735
DOI	10.1109/NLO.1994.470852
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-07-25
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Frequency conversion Optical frequency conversion Optical harmonic generation Gratings Optical scattering Tensile stress Birefringence Refractive index Particle scattering Geometry
Content Type	Text
Resource Type	Article

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