NDLI: Novel atomic layer deposited thin film beryllium oxide for InGaAs MOS Devices

Content Provider	IEEE Xplore Digital Library
Author	Koh, D. Yum, J.H. Akyol, T. Ferrer, D.A. Lei, M. Hudnall, T.W. Downer, M.C. Bielawski, C.W. Hill, R. Bersuker, G. Banerjee, S.K.
Copyright Year	2012
Description	Author affiliation: Department of Physics, The University of Texas, Austin, 78712, USA (Lei, M.; Downer, M.C.) \|\| Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, 78758, USA (Koh, D.; Yum, J.H.; Akyol, T.; Ferrer, D.A.; Banerjee, S.K.) \|\| Department of Chemistry, The University of Texas, Austin, 78712, USA (Bielawski, C.W.) \|\| Sematech Inc., 2706 Montopolis Drive, Austin, Texas 78741, USA (Hill, R.; Bersuker, G.) \|\| Department of Chemistry and Biochemistry, Texas State University, San Marcos, 78666 USA (Hudnall, T.W.)
Abstract	Metal-oxide-semiconductor (MOS) capacitors and field-effect-transistors (FET) with atomic layer deposited (ALD) BeO and Al2O3 dielectric layers on InGaAs substrate were fabricated for electrical characterization and device performance comparison. Physical characterization of BeO grown film on Si and InGaAs substrates were done using TEM, AFM, and XPS. BeO devices show decent C-V results, lower dielectric leakage current and interface defect density. High thermal stability, large energy band-gap and strong diffusion barrier properties of BeO along with ALD self-cleaning effects on the interface makes it an excellent candidate for a dielectric or interface passivation layer for InGaAs MOS devices.
Starting Page	163
Ending Page	166
File Size	1274512
Page Count	4
File Format	PDF
ISBN	9781467317252
ISSN	10928669
e-ISBN	9781467317245
DOI	10.1109/ICIPRM.2012.6403347
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-08-27
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium gallium arsenide Performance evaluation Silicon MOSFETs Dielectrics Annealing Gallium arsenide III–V MOSFETs ALD Beryllium Oxide high-κ MOS Capacitance
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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