NDLI: Deep levels analysis of Si doped MBE grown AlInAs layers

Content Provider	IEEE Xplore Digital Library
Author	Hoenow, H. Bach, H.-G. Bottcher, J. Gueissaz, F. Kunzel, H. Scheffer, F. Schramm, C.
Copyright Year	1992
Description	Author affiliation: Inst fuer Werkstoffe und Verfahrenstechnik, Humboldt-Universitat, Berlin, Germany (Hoenow, H.)
Abstract	AlInAs layers lattice matched to InP were grown by molecular beam epitaxy (MBE). To assess the influence of the MBE growth temperature T/sub g/ on the layer quality, T/sub g/ was varied in the range of 200 to 580 degrees C. The Schottky contact quality and the deep level properties were studied by capacitance-voltage (C-V) and current-voltage (I-V) measurements and by deep-level transient spectroscopy (DLTS), respectively. Two specific electron traps were detected, where a correlation between the growth temperature and the trap concentration has been established. These two traps, labelled TDE 1 and TDE 2, also appeared in AlInAs material grown by different MBE and MOVPE (metal-organic vapor phase epitaxy) equipment.
Starting Page	136
Ending Page	139
File Size	310025
Page Count	4
File Format	PDF
ISBN	0780305221
DOI	10.1109/ICIPRM.1992.235658
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1992-04-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Molecular beam epitaxial growth Electron traps Epitaxial growth Lattices Indium phosphide Temperature distribution Schottky barriers Capacitance-voltage characteristics Capacitance measurement Current measurement
Content Type	Text
Resource Type	Article

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Current-voltage and low frequency noise measurements on LT-InAlAs grown by MBE

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Deep levels analysis of Si doped MBE grown AlInAs layers

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