NDLI: Long wavelength GaInAs/GaAs quantum well lasers

Content Provider	IEEE Xplore Digital Library
Author	Schlenker, D. Miyamoto, T. Chen, Z. Koyama, F. Iga, K.
Copyright Year	1999
Description	Author affiliation: Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan (Schlenker, D.)
Abstract	We have obtained an excellent performance GaInAs/GaAs laser grown by MOCVD emitting in the long wavelength band (1@1.2 mm). The experimental critical thickness of GaInAs/GaAs quantum wells is well understood by the People and Bean model. The longest wavelength of around 1.2 mm is predicted for these structures. A 1.17 mm double quantum well laser has been demonstrated. We show that a strained buffer layer is effective for achieving good crystal quality for the active region and has no tradeoff on the device performance. For as cleaved devices a transparency current density of 180 A/cm/sup 2/ is estimated. A 900 mm long device shows a characteristic temperature as high as 150 K. Continuous wave operation is achieved for a ridge waveguide laser diode emitting at 1.2 mm.
Starting Page	499
Ending Page	502
File Size	363087
Page Count	4
File Format	PDF
ISBN	0780355628
ISSN	10928669
DOI	10.1109/ICIPRM.1999.773742
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-05-16
Publisher Place	Switzerland
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Quantum well lasers Vertical cavity surface emitting lasers Surface emitting lasers Indium Temperature Buffer layers Laser modes Optical materials Fiber lasers
Content Type	Text
Resource Type	Article

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