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Content Provider | IEEE Xplore Digital Library |
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Author | Chang Qi Xinzhi Shi Gaofeng Wang |
Copyright Year | 2010 |
Description | Author affiliation: Inst. of Microelectronics and Information Technology, Wuhan University, Wuhan, 430072 China (Chang Qi; Xinzhi Shi; Gaofeng Wang) |
Abstract | A thermal circuit model of multiquantum-well (MQW) Vertical-Cavity Surface-Emitting Lasers (VCSEL) based on a modified rate equation is presented. This model accounts for the thermal and static and dynamic behavior of the MQW VCSEL. A three level scheme for the rate equations has been chosen in order to model carrier transport effects. The introduction of quasi-two-dimensional (quasi-2-D) gateway states between unbound and confined states has been used to calculate, for each well independently, carrier density and gain. This model has been implemented on a SPICE circuit emulator. Numerical examples are introduced to replicate the multi-quantum well VCSEL's typical dc, Small-signal and transient operation, including temperature-dependent light-current (LI) curves, modulation responses, and diffusive turn-off transients. |
Starting Page | 1498 |
Ending Page | 1501 |
File Size | 129011 |
Page Count | 4 |
File Format | |
ISBN | 9781424457052 |
e-ISBN | 9781424457083 |
DOI | 10.1109/ICMMT.2010.5524931 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2010-05-08 |
Publisher Place | China |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Circuits Quantum well devices Vertical cavity surface emitting lasers Laser modes Carrier confinement Equations High speed optical techniques Charge carrier density Surface emitting lasers Energy states |
Content Type | Text |
Resource Type | Article |
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