NDLI: Wideband on-chip RF MEMS switches in a BiCMOS technology for 60 GHz applications

Content Provider	IEEE Xplore Digital Library
Author	Guoan Wang Hanyi Ding Woods, W. Mina, E.
Copyright Year	2008
Description	Author affiliation: IBM Syst. & Technol. Group, Essex Junction, VT (Guoan Wang; Hanyi Ding; Woods, W.; Mina, E.)
Abstract	In this paper, an on-chip RF MEMS capacitive switch is designed and simulated with a 0.13 mum IBM SiGe BiCMOS technology for the first time. Mechanical and electrical design of the high frequency switch are discussed in this paper. Special consideration to improve Con/Coff ratio of the switch is used with multi metal layers configuration. The switch is designed for 60 GHz wireless applications, the results show that the switch has the insertion loss is less than 0.2 dB when the switch is off, while the isolation loss is larger than 15 dB when the switch is on over the frequency from 40 to 70 GHz. The calculated pull-in voltage of the switch is only about 10 volts, the switch is compact comparing with the reported PIN diode RF switch and has the membrane dimension of 10 mum x 240 mum.
Starting Page	1389
Ending Page	1392
File Size	274308
Page Count	4
File Format	PDF
ISBN	9781424418794
DOI	10.1109/ICMMT.2008.4540701
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-04-21
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Wideband Radiofrequency microelectromechanical systems Switches BiCMOS integrated circuits Silicon germanium Germanium silicon alloys Insertion loss Voltage Radio frequency Biomembranes Millimeter wave components RF MEMS switch BiCMOS technology Silicon-Germanium Distributed passives 60 GHz
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Millimeter-wave RF-MEMS SPDT switch networks in a SiGe BiCMOS process technology

Millimeter-wave RF-MEMS SPDT switch networks in a SiGe BiCMOS process technology

Wideband RF-MEMS shunt switches with high reliability for microwave and millimeter wave applications

60 GHz Band RF MEMS Switch

BEOL embedded RF-MEMS switch for mm-wave applications

A compact, transformer-based 60 GHz SPDT RF switch utilizing diode-connected SiGe HBTs

High-speed SiGe BiCMOS technologies for applications beyond 100 GHz

Silicon Millimeter-Wave Radio Circuits at 60-100 GHz

Packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads

Wideband on-chip RF MEMS switches in a BiCMOS technology for 60 GHz applications

Similar Documents

Millimeter-wave RF-MEMS SPDT switch networks in a SiGe BiCMOS process technology

Millimeter-wave RF-MEMS SPDT switch networks in a SiGe BiCMOS process technology

Wideband RF-MEMS shunt switches with high reliability for microwave and millimeter wave applications

60 GHz Band RF MEMS Switch

BEOL embedded RF-MEMS switch for mm-wave applications

A compact, transformer-based 60 GHz SPDT RF switch utilizing diode-connected SiGe HBTs

High-speed SiGe BiCMOS technologies for applications beyond 100 GHz

Silicon Millimeter-Wave Radio Circuits at 60-100 GHz

Packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads

Wideband on-chip RF MEMS switches in a BiCMOS technology for 60 GHz applications