NDLI: Analysis of thermoelectric and thermomechanical effects in MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Krishnamoorthy, S. Chowdhury, M.H.
Copyright Year	2008
Description	Author affiliation: Electr. & Comput. Eng., Univ. of Illinois at Chicago, Chicago, IL, USA (Krishnamoorthy, S.; Chowdhury, M.H.)
Abstract	As the dimensions of transistors continue to shrink, the effect of self-heating becomes more pronounced. With such downscaling, the thermal conductivity of ultra-thin body transistors causes considerable change in electrical and mechanical properties of the device. This paper investigates the thermo-electric and the thermo-mechanical effects of stresses and strains in MOSFETs. Nanoscale device dimensions and complicated device geometries coupled with novel but thermally insulating materials build up a stress along the channel and drain of the MOSFET. The stress and strain in these thin refractory layers affect the mobility of the carriers and the drain current. Here an analysis of the impacts of stress and strain on the electrical performance of MOSFETs is presented.
Starting Page	200
Ending Page	203
File Size	837898
Page Count	4
File Format	PDF
ISBN	9781424423699
DOI	10.1109/ICM.2008.5393769
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-12-14
Publisher Place	United Arab Emirates
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermoelectricity Thermomechanical processes MOSFETs Thermal stresses Capacitive sensors Transistors Thermal conductivity Mechanical factors Nanoscale devices Geometry
Content Type	Text
Resource Type	Article

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