NDLI: Two-dimensional analytical modeling of nanoscale electrically-shallow junction (EJ) fully depleted SOI MOSFET

Content Provider	IEEE Xplore Digital Library
Author	Jagadesh Kumar, M. Orouji, A.A.
Copyright Year	2004
Description	Author affiliation: Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India (Jagadesh Kumar, M.; Orouji, A.A.)
Abstract	A new analytical surface potential and threshold voltage model for a SOI MOSFET device with electrically shallow junction is presented to investigate the short-channel effects (SCEs). Our model includes the effects of the source/drain and body doping concentrations, the side and main gate lengths and their work functions, applied drain and substrate biases, the thickness of the gate and buried oxide and also the silicon thin film. We demonstrate that the surface potential in the main channel region is "screened" from the changes in the drain potential resulting in reduced SCEs. Simulation results using a 2-D device simulator are used to verify the validity of this model for various cases.
Starting Page	376
Ending Page	379
File Size	563136
Page Count	4
File Format	PDF
ISBN	0780386566
DOI	10.1109/ICM.2004.1434591
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-12-06
Publisher Place	Tunisia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Analytical models MESFETs MOSFET circuits Threshold voltage Dielectric thin films Doping Semiconductor process modeling Substrates Silicon Semiconductor films
Content Type	Text
Resource Type	Article

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Two-dimensional analytical modeling of nanoscale electrically-shallow junction (EJ) fully depleted SOI MOSFET