NDLI: Spin and orbital moments of ultra-thin Fe films on various semiconductor surfaces

Content Provider	IEEE Xplore Digital Library
Author	Claydon, J.S. Niu, D. Xu, Y.B. Telling, N.D. Kirkman, I.W. van der Laan, G.
Copyright Year	2005
Description	Author affiliation: Dept. of Electron., York Univ., UK (Claydon, J.S.; Niu, D.; Xu, Y.B.)
Abstract	The magnetic moments of ultrathin 7 monolayer (ML) Fe films on GaAs, InAs and InGaAs were studied using the element specific X-ray magnetic circular dichroism (XMCD). The 7 ML Fe films were grown by molecular beam epitaxy (MBE) at room temperature and capped with 15 ML Cr to prevent oxidisation on removal from the vacuum system. The special substrates took the form of GaAs wafers topped with a 0.3/spl mu/m epilayer of GaAs, InAs or InGaAs followed by an As capping layer. The lattice parameters of the GaAs, InAs and InGaAs epilayers were chosen for their lattice constants which, in a 2:1 relationship with Fe give mismatches of 1.56%, 5.32% and 0%, respectively. All samples revealed a reduced spin moment compared to bulk value and a marked enhancement in orbital moment. The similarity of the magnetic thin film features observed for the different substrates suggests that an unexpected degree of tolerance exists in these Fe films to surface issues such as strains induced by different lattice matches.
Sponsorship	Magnetics Soc. of Japan Magnetics Soc. of the IEEE
Starting Page	69
Ending Page	70
File Size	222122
Page Count	2
File Format	PDF
ISBN	0780390091
DOI	10.1109/INTMAG.2005.1463463
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-04-04
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Iron Semiconductor films Magnetic films Gallium arsenide Indium gallium arsenide Lattices Molecular beam epitaxial growth Substrates Magnetic moments Magnetic semiconductors
Content Type	Text
Resource Type	Article

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