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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Weisser, S. Larkins, E.C. Czotscher, K. Benz, W. Daleiden, J. Fleissner, J. Maier, M. Ralston, J.D. Romero, B. Schonfelder, A. Rosenzweig, J. |
| Copyright Year | 1995 |
| Description | Author affiliation: Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany (Weisser, S.) |
| Abstract | We have recently reported short-cavity In/sub 0.35/Ga/sub 0.65/As/GaAs MQW lasers with modulation bandwidths up to 33 GHz using beryllium (Be) as p-dopant in the active region. At the growth temperatures used for this structure, however, a modulation-type p-doping in the core can not be realized due to the redistribution of Be during the growth process. In this work, we present InGaAs/GaAs MQW lasers with a similar epilayer structure, but with the Be-doping in the core replaced by carbon (C), resulting in a modulation-doped core region. Short-cavity lasers fabricated using this epilayer structure demonstrate record CW direct modulation bandwidths up to 37 GHz in 6x130 /spl mu/m/sup 2/ devices at room temperature. |
| Starting Page | 91 |
| Ending Page | 92 |
| File Size | 128327 |
| Page Count | 2 |
| File Format | |
| ISBN | 0780324501 |
| DOI | 10.1109/LEOS.1995.484523 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1995-10-30 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Bandwidth Indium gallium arsenide Gallium arsenide Quantum well devices Frequency Temperature Waveguide lasers Threshold current Optical noise Optical waveguides |
| Content Type | Text |
| Resource Type | Article |
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