NDLI: Ion energy distributions in plasma immersion ion implantation-theory and experiment

Content Provider	IEEE Xplore Digital Library
Author	Kellerman, P.L. Bernstein, J.D. Bradley, M.P.
Copyright Year	2000
Description	Author affiliation: Axcelis Technol., Beverly, MA, USA (Kellerman, P.L.)
Abstract	Much has been published recently stating the effectiveness of plasma immersion ion implantation (PIII) in producing ultra-shallow junctions (USJ). Although PIII is capable of producing USJ implants as effectively as conventional mass-analyzed ion implantation, there are several differences. One such difference, due to sheath dynamics and pulse characteristics, is that PIII implants always contain low energy components. Although such (shallower) components are not deleterious for USJ formation, there is much concern that they can be controlled repeatably. Others have developed sheath models which relate pulse current to ion energies, and have compared predicted currents to measurements of the total platen current. However, the total platen current includes contributions due to displacement currents (needed to create the high voltage negative pulse) as well as both plasma and secondary electron currents. We developed a Faraday cup embedded within the wafer platen which is capable of measuring the ion current alone. This ion current data, along with the platen voltage data has been be used to test and further refine the sheath model. The model was then used to predict the energy content of the ions, which was further tested by comparison with as-implanted SIMS profiles.
Starting Page	484
Ending Page	487
File Size	385678
Page Count	4
File Format	PDF
ISBN	0780364627
DOI	10.1109/IIT.2000.924193
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-09-17
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Plasma immersion ion implantation Plasma measurements Plasma sheaths Implants Predictive models Pulse measurements Current measurement Voltage Testing Semiconductor device modeling
Content Type	Text
Resource Type	Article

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