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Content Provider | IEEE Xplore Digital Library |
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Author | Schneider, R.A. Thura Lin Naing Rocheleau, T.O. Nguyen, C.T.-C. |
Copyright Year | 2015 |
Description | Author affiliation: EECS Dept., Univ. of California, Berkeley, Berkeley, CA, USA (Schneider, R.A.; Thura Lin Naing; Rocheleau, T.O.; Nguyen, C.T.-C.) |
Abstract | A voltage controlled resonance frequency tuning mechanism, capable of effecting 1,500 ppm frequency shifts or more, is demonstrated for the first time on an AlN capacitive-piezoelectric resonator. The key enabler here is a compliant top electrode suspension that moves with applied voltage to effectively vary capacitance in series with the device, hence changing its series resonance frequency. Capacitive-piezoelectric AlN micromechanical resonators, i.e., those with electrodes not directly attached to the piezoelectric material, already exhibit high Q-factors compared to attached-electrode counterparts, e.g., 8,800 versus 2,100 at 300 MHz; are on/off switchable; and, as shown in this work, can exhibit electromechanical coupling $C_{x}=C_{0}$ of 1.0%. This new ability to tune frequency without the need for external components now invites the use of on-chip corrective schemes to improve accuracy or reduce temperature-induced frequency drift, making an even more compelling case to employ this technology for frequency control applications. |
Starting Page | 700 |
Ending Page | 705 |
File Size | 2255269 |
Page Count | 6 |
File Format | |
e-ISBN | 9781479988662 |
DOI | 10.1109/FCS.2015.7138938 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2015-04-12 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Tuning Electrodes Resonant frequency Aluminum nitride III-V semiconductor materials Capacitance Transducers |
Content Type | Text |
Resource Type | Article |
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