NDLI: Electron emission and capture kinetics of a bistable medium-deep center in n-type bulk GaAs

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Proceedings of Semiconducting and Semi-Insulating Materials Conference

Proceedings of Semiconducting and Semi-Insulating Materials Conference

Semi-insulating InP grown with a CCl/sub 4/ doping source

Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers

Iron doped semi-insulating GaInP lattice matched to GaAs for device fabrication

First results of s.i. GaAs single crystal growth applying the vapour pressure controlled Czochralski method

Control of stoichiometry dependent defects in low temperature GaAs

Characterization of conduction in LTG-GaAs

Control of spatial distribution of As clusters in LT GaAs by indium delta doping

Conductance properties of as-grown and annealed MBE GaAs layers grown at temperatures between 200 and 420/spl deg/C

Ultrafast carrier trapping and high resistivity of MeV energy ion implanted GaAs

Investigation of the solid-phase epitaxial growth of amorphized GaAs with in-situ and ex-situ electron microscopy

Observations of low frequency admittance between isolated GaAs structures formed by ion implantation and by epitaxy on epitaxial buffer layers prepared at high and low temperatures

Zn diffusion-induced disordering in semi-insulating, p-doped, and n-doped GaAs/AlGaAs multilayered structures: a comparative study

A comparative study of the defects in Fe-doped or undoped semi-insulating InP after high temperature annealing

Mesoscopic homogenization of semi-insulating GaAs by two-step post growth annealing

Annealing characteristics of native defects in low-temperature-grown MBE GaAs

On relation between detection parameters of SI GaAs particle detectors and physical properties of starting materials

Growth of GaN single crystals and properties of homoepitaxial MOCVD layers

Structural defects in GaN

Strain effects in GaN thin film growth

Temperature dependence of the radiative recombination in GaN

Phonon dispersion in gallium nitride

Excitons in III-V strained marginal systems: dispersion relations and absorption processes

An electrical and Raman spectroscopic study of a-GaAs/sub 1-x/N/sub x//Si heterostructures

Electrical and optical properties of Zn/sub x/Mg/sub 1-x/Se/ZnTe and Zn/sub x/Mg/sub 1-x/Se/GaAs heterojunctions

ZnCdSe-ZnSe heterostructures grown by MOVPE: influence of the cadmium precursor

Picosecond all-optical modulation in CdTe/CdZnTe multi-quantum wells under an applied electric field

Lattice dynamics of Mn/sub x/Cd/sub 1-x/Te mixed crystals

Deep level characterization of Ti and V doped Cd/sub 96%/Zn/sub 4%/Te crystals for semi-insulating and photorefractive applications

Nanoscale mapping of dopant distributions in InP current blocking layers

Characterisation of deep-level defects in semi-insulating GaAs and InP by high resolution photoinduced transient spectroscopy (HRPITS)

On deep levels in high-resistivity LEC-GaAs investigated by means of photo induced current transient spectroscopy

Point defects in undoped semi-insulating GaAs: correlation between thermally stimulated current and positron annihilation spectroscopies

Local mode spectroscopy of oxygen-implanted GaAs MBE layers

Transmission electron microscopy of Al-rich III-V oxides

Compensation mechanism and transport behaviour of semi-insulating GaAs:Cu

Current-voltage and low frequency noise measurements on LT-InAlAs grown by MBE

Leakage current from non-alloyed metal on carbon controlled semi-insulating GaAs crystals

Photoelastic characterization of undoped semi-insulating GaAs wafers with a high-spatial-resolution infrared polariscope

Atomic force microscopy and Raman scattering study of GaAs/InAs(111) A and B MOVPE heterostructures

Characterization of III-V periodic structures by spectroscopic ellipsometry and grazing X-ray reflectance

Be diffusion in InGaAs epitaxial layers during rapid thermal annealing: an effective diffusivity approach and a nonequilibrium model

SiGeC materials

Study and fabrication of amorphous and microcrystalline silicon-carbon alloys for microelectronic applications

Nanocrystalline SiGe films: structure and properties

Comparison of arsenic diffusion in Si and Si/sub 1-x/Ge/sub x/ epilayers

Heteroepitaxy of Ge-Si/sub 1-x/Ge/sub x/ superlattices on Si (100) substrates by GeH/sub 4/-Si MBE

Electronic and optical properties of vanadium doped silicon carbide crystals grown by the sublimation sandwich method

Donor doping calibration in 4H-SiC using photoluminescence spectroscopy

Dopant level freeze-out in 6H-SiC Schottky diodes and junctions

Schottky diodes on Si/sub 1-x/Ge/sub x/, Si/sub 1-x-y/Ge/sub x/C/sub y/ and Si/sub 1-y/C/sub y/ alloys

Noise performance of Si/Si/sub 1-x/Ge/sub x/ n-channel HEMTs and p-channel FETs

Raman scattering analysis of SiGe annealed and implanted layers

Electrophysical studies of 2D-hole spectral characteristics and peculiarities of scattering mechanisms in Ge layers of Ge-Ge/sub 1-x/Si/sub x/ heterostructures

Properties of amorphous SiC thin films prepared by plasma enhanced chemical vapour deposition

Surface modification of SiC thin films by pulsed electron and ion beams

Structural properties and electron states of amorphous diamond-like carbon

Evidence of stress dependence in the diffusion of point defects in GaAs/GaAlAs heterostructures

Infrared absorption related to the metastable state of arsenic antisite defects in electron-irradiated GaAs

Study of structure of low-symmetry complexes in n-GaAs through investigation of integrated polarization of photoluminescence under uniaxial pressure

Low-dislocation-density and low-residual-strain semi-insulating GaAs grown by vertical boat method

Low dislocation density 3-inch Si doped GaAs crystals by Vertical Boat growth

Defect characterization in plastically deformed gallium arsenide

Influence of MBE growth conditions on deep electronic states at the inverted GaAs/AlAs interface

Deep trap characterization of Al./sub 48/In./sub 52/As/In/sub .52/(Ga/sub .7/Al/sub .3/)/sub .48/As heterostructures

Identification and structure of the 0.95 eV photoluminescence centers in n-type GaAs

Electron emission and capture kinetics of a bistable medium-deep center in n-type bulk GaAs

Influence of fast neutrons on the recombination and electrical properties of neutron transmutation doped gallium arsenide

Electrical and optical properties of non-uniform semiconducting synthetic diamond with deep impurity levels

Computer simulation of the growth of silicon ridges and wires

Why are low-temperature MBE grown semiconductors important for an all-solid-state ultrafast laser technology?

Subpicosecond response of GaAs Fabry-Perot microcavities

Lateral diffusion of carriers and screening measurements in GaInAsP/GaInAs MQW photorefractive devices at 1.55 /spl mu/m

Subnanosecond optical deflection in Van der Waals bonded GaAlAs-GaAs MQW: effects of carrier lifetime and electric field

LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers

Accurate flux estimation during molecular beam epitaxy growth of vertical-cavity surface-emitting lasers

Hexagonal structures for two-dimensional photonic crystals

The influence of native point defects on the performance of diodes built on neutron-irradiated semi-insulating GaAs

Influence of the Schottky pad in semi-insulating GaAs on the Schottky barrier in the active layer

Effects of semi-insulating substrate on kink phenomena in GaAs MESFETs

Influence of the compensation in semi-insulating GaAs on the particle detector performance

Trap influence on the performance of gallium arsenide radiation detectors

An analytical noise evaluation for super low-noise InAlAs/InGaAs/InAlAs/InP HEMTs

An analytical characterization for IMODFETs

Conference Author index

Electron emission and capture kinetics of a bistable medium-deep center in n-type bulk GaAs

Content Provider	IEEE Xplore Digital Library
Author	Shiraki, H. Tokuda, Y. Sassa, K.
Copyright Year	1996
Description	Author affiliation: Adv. Technol. Res. Labs., Mitsubishi Mater. Corp., Saitama, Japan (Shiraki, H.)
Abstract	The interaction between EL5 and EL6 was studied by using isothermal constant-capacitance voltage transient spectroscopy (CCVTS). Anomalous filling time dependence of CCVTS peak heights for two trap components of EL5 and EL6 was observed in a long range filling pulse duration. The decrement of one EL6 constituent was nearly equal to the increment of one EL5 constituent. This variation could be reversed by controlling electron occupation fractions of these traps. The calculation by rate equations based on a bistable reaction model could explain well such characteristic behaviors.
Starting Page	299
Ending Page	302
File Size	269820
Page Count	4
File Format	PDF
ISBN	0780331796
DOI	10.1109/SIM.1996.571104
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-04-29
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electron traps Pulse measurements Gallium arsenide Voltage Charge carrier processes Filling Electron emission Kinetic theory Capacitance measurement Isothermal processes
Content Type	Text
Resource Type	Article

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