NDLI: Heteroepitaxy of GaN on Si(111)

Content Provider	IEEE Xplore Digital Library
Author	Krost, A. Dadgar, A.
Copyright Year	2002
Description	Author affiliation: Inst. for Exp. Phys., Otto-von-Guericke Univ., Magdeburg, Germany (Krost, A.; Dadgar, A.)
Abstract	The growth of high-quality group-III-nitrides on silicon is very attractive for low-cost optoelectronic and electronic devices such as light emitting diodes or field effect transistor. However, attempts to grow GaN on Si suffered from large lattice and thermal mismatch and the strong chemical reactivity of Ga and Si at elevated temperatures so far. The latter problem can be easily solved using gallium-free seed layers AlN. The key problem for device structure growth on Si is the thermal mismatch leading to cracks for layer thicknesses above 1 /spl mu/m. The cracks can be overcome by several concepts as, e.g patterning the substrate and/or the insertion of low-temperature (LT) AlN interlayers which enable the growth of device-relevant GaN thicknesses.
Starting Page	41
Ending Page	47
File Size	360487
Page Count	7
File Format	PDF
ISBN	0780374185
DOI	10.1109/SIM.2002.1242722
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-06-30
Publisher Place	Slovakia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature Atomic layer deposition Lattices Light emitting diodes Etching Silicon Epitaxial growth Gallium nitride Substrates Chemicals
Content Type	Text
Resource Type	Article

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