NDLI: Megawatt peak power, 1 kHz, 266 nm sub nanosecond laser source based on single-crystal fiber amplifier

Content Provider	IEEE Xplore Digital Library
Author	Deyra, L. Martial, I. Balembois, F. Diderjean, J. Georges, P.
Copyright Year	2013
Description	Author affiliation: Fibercryst SAS, La Doua Batiment l'Atrium, Villeurbanne, France (Martial, I.; Diderjean, J.) \|\| Lab. Charles Fabry, Univ. Paris-Sud, Palaiseau, France (Deyra, L.; Balembois, F.; Georges, P.)
Abstract	Summary form only given. The development of solid state UV lasers is major industrial challenge for various applications, among them spectroscopy, lithography, material processing, or ophthalmology.In this paper, we present a 266 nm UV source based on the fourth harmonic generation of a Nd:YAG single-crystal fiber MOPA previously developed [4]. The 1064 nm amplified laser system is described in detail in [5]. A Q-switched microchip laser is amplified with a Nd:YAG singlecrystal fiber in double pass configuration. It delivers a maximum of 2.3 W at 1 kHz with pulses of 550 ps (2.3 mJ pulses) and an excellent beam quality (M2=1.06), reaching a peak power of more than 4 MW. The frequency conversion scheme (Fig.1) is based on harmonic generation LBO/BBO crystals. We reached 22.7% of total conversion efficiency from infrared to UV. We obtained a 266 nm output of 530 mW (Fig.2), at 1 kHz with pulses width of 540 ps. This represents a peak power of 980 kW. We measured the UV beam profile and determine its M2 to be <;2. To the best of our knowledge, this is the first realization of a 266 nm sub nanosecond source based on passively Q-switched oscillator with MW peak power combined with half-watt average power. This work demonstrates the potential of single-crystal fiber amplifiers for high performance UV MOPA systems
Sponsorship	Eur. Phys. Soc.
Starting Page	1
Ending Page	1
File Size	75473
Page Count	1
File Format	PDF
e-ISBN	9781479905942
DOI	10.1109/CLEOE-IQEC.2013.6800596
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-05-12
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical fiber amplifiers Optical fiber polarization Microchip lasers Frequency conversion Laser beams Fiber lasers
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Megawatt peak power, 1 kHz, 266 nm sub nanosecond laser source based on single-crystal fiber amplifier

Megawatt peak power, 1 kHz, 266 nm sub nanosecond laser source based on single-crystal fiber amplifier (orale)

Megawatt peak power, 1 kHz, 266 nm sub nanosecond laser source based on single-crystal fiber amplifier (orale)

Megawatt peak power, 1 kHz, 266 nm sub nanosecond laser source based on single-crystal fiber amplifier

> 0.5 MW peak power, kHz repetition rate at 266 nm using [100]-cut Nd:YAG microchip laser

1 MW Peak Power, Sub-Nanosecond Master Oscillator Fiber Power Amplifier

Megawatt peak power picosecond pulse fiber amplifier based on divided-pulse amplification

> 1 MW peak power at 266 nm in nonlinear YAl3(BO3)4 (YAB) single crystal

High power single frequency 1014.8 nm Yb-doped fiber amplifier and frequency quadrupling to 253.7 nm

Megawatt peak power, 1 kHz, 266 nm sub nanosecond laser source based on single-crystal fiber amplifier

Similar Documents

Megawatt peak power, 1 kHz, 266 nm sub nanosecond laser source based on single-crystal fiber amplifier

Megawatt peak power, 1 kHz, 266 nm sub nanosecond laser source based on single-crystal fiber amplifier (orale)

Megawatt peak power, 1 kHz, 266 nm sub nanosecond laser source based on single-crystal fiber amplifier (orale)

Megawatt peak power, 1 kHz, 266 nm sub nanosecond laser source based on single-crystal fiber amplifier

> 0.5 MW peak power, kHz repetition rate at 266 nm using [100]-cut Nd:YAG microchip laser

1 MW Peak Power, Sub-Nanosecond Master Oscillator Fiber Power Amplifier

Megawatt peak power picosecond pulse fiber amplifier based on divided-pulse amplification

> 1 MW peak power at 266 nm in nonlinear YAl3(BO3)4 (YAB) single crystal

High power single frequency 1014.8 nm Yb-doped fiber amplifier and frequency quadrupling to 253.7 nm

Megawatt peak power, 1 kHz, 266 nm sub nanosecond laser source based on single-crystal fiber amplifier