NDLI: Photo-generated carriers decay behavior of nano-crystalline β-SiC thin film grown at different substrate bias voltage

Content Provider	IEEE Xplore Digital Library
Author	Xiao-xia Han
Copyright Year	2012
Description	Author affiliation: Department of Network Engineering, Hebei Software Institute, Hebei Baoding, China (Xiao-xia Han)
Abstract	The photo-generated carriers decay behavior of nanocrystalline β-SiC film grown by helicon wave plasma-enhanced chemical vapor deposition process at different substrate bias voltage is measured by microwave absorption technique. The probability of nanosecond fast decay of the photo-generated carriers concentration increases with substrate bias. The fast decay of photo generated carriers related to the radiative recombination process and substrate bias led to an increase in trap depth in the slow decay. The decay of nano-SiC thin films at different substrate bias voltage with different time constant indicates that the increase of substrate negative bias led to the increase in the density of deep trap levels and different trap level position related to different decay time. Photo-carrier transient behavior is closely related to the film microstructure, The high defect states density of nano-silicon carbide grain boundary lead to carriers trapping probability increase and the nonradiative recombination probability decreases.
Starting Page	168
Ending Page	170
File Size	140943
Page Count	3
File Format	PDF
ISBN	9781467309141
e-ISBN	9781467309158
DOI	10.1109/ICSSEM.2012.6340699
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Voltage measurement Silicon carbide Absorption Microwave absorption Films Photo-generated carriers Microwave theory and techniques Nano-SiC Substrates Microwave measurements
Content Type	Text
Resource Type	Article

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