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Content Provider | IEEE Xplore Digital Library |
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Author | Maskuriy, F. Alias, M.S. Mitani, S.M. Manaf, A.A. |
Copyright Year | 2011 |
Description | Author affiliation: Microelectronic & Nanotechnology, Telekom Research & Development, TM Innovation Centre, Lingkaran Teknokrat Timur, 63000 Cyberjaya Selangor, Malaysia (Maskuriy, F.; Alias, M.S.; Mitani, S.M.; Manaf, A.A.) |
Abstract | We investigate the performance of GaInNAs broad area laser diode at room temperature when the InGaAs and GaNAs barrier configuration is applied to the quantum well system in the active region. The simulation software PICS3D is used in this work. By plotting the light versus the current curve, we can extract the differential quantum efficiency, ηd and internal quantum efficiency, ηi for the laser. The internal loss of the laser is then determined by plotting the slope of the linear fit line to the inverse of external differential quantum efficiency versus cavity length data points. The inverse slope of the efficiency versus cavity length plot shows that the laser exhibits low internal loss of $2.8cm^{−1}$ with ηi of 58%. This shows good simulation result of GaInNAs laser diode. |
Starting Page | 1 |
Ending Page | 4 |
File Size | 891102 |
Page Count | 4 |
File Format | |
ISBN | 9781612842653 |
e-ISBN | 9781612842646 |
e-ISBN | 9781612842639 |
DOI | 10.1109/ICP.2011.6106823 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2011-10-17 |
Publisher Place | Malaysia |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Quantum well Semiconductor lasers Gallium arsenide Long wavelength lasers GaInNAs Indium gallium arsenide Chemical lasers Nitrogen Laser beams Laser applications |
Content Type | Text |
Resource Type | Article |
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