NDLI: Strain dependence of the performance enhancement in strained-Si n-MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Welser, J. Hoyt, J.L. Takagi, S. Gibbons, J.F.
Copyright Year	1994
Description	Author affiliation: Solid State Electron. Lab., Stanford Univ., CA, USA (Welser, J.; Hoyt, J.L.)
Abstract	The first measurements of the strain dependence of the electron mobility enhancement in n-MOSFETs employing tensilely-strained Si channels are reported. For pseudomorphic Si films grown on relaxed-Si/sub 1-x/Ge/sub x/ layers, the mobility enhancement ratio is found to saturate at approximately 1.76 at room temperature for x on the order of 0.20. As the temperature is lowered, the mobility enhancements for all strain levels initially converge, and subsequently decrease, with no enhancement observed at cryogenic temperatures (/spl ap/5 K). Similar behavior is seen at higher drain fields in the device transconductance.<>
Starting Page	373
Ending Page	376
File Size	354923
Page Count	4
File Format	PDF
ISBN	0780321111
ISSN	01631918
DOI	10.1109/IEDM.1994.383389
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-12-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Capacitive sensors MOSFET circuits Buffer layers Temperature Raman scattering Strain measurement Laboratories Semiconductor films Transconductance Electron mobility
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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