NDLI: InGaAs tri-gate MOSFETs with MOVPE regrown source/drain

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2015 73rd Annual Device Research Conference (DRC)

72nd Device Research Conference

Technical program committee

Schedule of events

Table of contents

Plenary session

How far can we push Si CMOS and what are the alternatives for future ULSI

Energy scaling of spintronics for information processing — A new paradigm towards intelligent systems

Laser biosensors for drug discovery

Alternate and steep slope devices

A critical examination of the Mott transistor and emergent phase switches for electronics

Modulation of over $10^{14}$ $cm^{−2}$ electrons at the SrTiO3/GdTiO3 heterojunction

Multi-frequency lithium niobate thin-film resonators

Lateral transport in two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET)

Metal-dichalcogenide hetero-TFETs: Are they a viable option for low power electronics?

InGaAs/GaAsSb interband tunneling FETs as tunable RF detectors

Experimental demonstration of inverter and NAND operation in p-TFET logic at ultra-low supply voltages down to VDD = 0.15 V

The piezoelectric transformer field effect transistor

Characteristics of In0.17Al0.83N/AlN/GaN MOSHEMTs with steeper than 60 mV/decade sub-threshold slopes in the deep sub-threshold region

Steep slope VO2 switches for wide-band (DC-40 GHz) reconfigurable electronics

Optoelectronics and III-Vs

Plasmonic and metallic cavity nanolasers: A new paradigm for semiconductor lasers?

A monolithic InGaN/GaN disk-in-nanowire electrically pumped edge-emitting green (λ=533 nm) laser on (001) silicon

Diffraction limited 3.15 μm cascade diode lasers

Sub-volt drive voltage, ultra wide bandwidth substrate removed electro-optic modulators

Compact optical sensing systems

Embedded graphene photodetectors for silicon photonics

Gated piezoresistive GaN microcantilever as an acoustic transducer

Record high gain from InAs avalanche photodiodes at room temperature

Enhancement-mode Al2O3/InAlN/GaN MOS-HEMT on Si with high drain current density 0.84 A/mm and threshold voltage of +1.9 V

1/f hopping noise in molybdenum disulphide

All-CVD graphene field-effect transistors with h-BN gate dielectric and local back gate

Band-to-band tunneling in MOS-capacitors for rapid tunnel-FET characterization

Battery-less impact-logging device consisting of a vibration energy scavenger and ferroelectric memory

Bi-metallic and mono-metallic antenna-coupled nanoscale thermocouples for infrared detection

Biomimetic $4F^{2}$ synapse with intrinsic timescale for pulse based STDP by I-NPN selection device

Calculation of electron impact ionization co-efficient in β-Ga2O3

Charge-carrier injection, extraction and trapping dynamics in organic thin-film transistors based on different organic semiconductors evaluated by displacement current measurements

CMOS-compatible Ti/Al ohmic contacts (Rc <0.3 Ωmm) for u-AlGaN/AlN/GaN HEMTs by low temperature annealing (<450 $^{°}C)$

Conductance of graphene: Role of metal contact, charge puddles and differential gating

Demonstration of 2D/3D p-MoS2/n-SiC junction

Design of radial nanowire tunnel field-effect transistors

Detection of the first charged states in ultrasmall Si single-hole transistor using dual-channel radio frequency reflectometry

Dual-gated field-effect transistors made from wafer-scale synthetic few-layer molybdenum disulfide

Effect of HfO2 and Al2O3 on monolayer MoS2 electronic structure

Electron transport in large-area epitaxial MoS2

Electrostatic cross-talk to define the density limit of aligned-array phase-change-memory with carbon nanotube electrodes

Enhanced hole mobility of Ge/GeSn pMOSFETs with a GeSnO interface layer and a NiGe Schottky source/drain

Enhancing the deep ultraviolet response of 4H-silicon carbide-based photodiodes between 210 nm and 255 nm

Epitaxial rare earth oxide (EOx) FinFET: A variability-resistant Ge FinFET architecture with multi VT

GaN lateral PolarSJs: Polarization-doped super junctions

Gate tunable MoS2-based thermoelectric devices

Generating true random numbers using on-chip complementary polarizer spin-transfer torque magnetic tunnel junctions

Graphene nanoribbon plasmonic waveguides: Fundamental limits and device implications

High mobility InGaZnO thin film transistor using narrow-bandgap titanium-oxide semiconductor as channel capping layer

Hybrid spintronics-straintronic nanomagnetic logic with two-state elliptical and four-state concave magnetostrictive nanomagnets

III-V Nitride based triangular microcantilever heater for selective detection of organic vapors at low temperatures

Impact of argon-ambient annealing in hafnium oxide Resistive Random Access Memory

Improved device isolation in AlGaN/GaN HEMTs on Si by heavy $Kr^{+}$ Ion implantation

Indium tin oxide (ITO) and Al-doped ZnO (AZO) interfacial layers for Ohmic contacts on n-type Germanium

InGaAs MOSFETs with InP drain

InGaAs tri-gate MOSFETs with MOVPE regrown source/drain

InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications

Investigation of aging and restoration of polyethylene-oxide cesium-perchlorate solid polymer electrolyte used for ion doping of a WSe2 field-effect transistor

Investigation of switching mechanism in forming-free multi-level resistive memories with atomic layer deposited HfTiOx nanolaminate

Ionic gated WSe2 FETs: Towards transparent Schottky barriers

Lateral energy band engineering of Al2O3/III-nitride interfaces

Lateral versus vertical gate-all-around FETs for beyond 7nm technologies

Memristive synaptic plasticity in Pr0.7Ca0.3MnO3 RRAM by bio-mimetic programming

Monolithically patterned high mobility solution-processed metal-oxide TFTs with metallic capping layers

Observation of impact ionization at sub-0.5V and resultant improvement in ideality in I-NPN selector device by Si epitaxy for RRAM applications

Operating principle verification and scaling benefits of SGLC eNVM

Performance analysis of different SRAM cell topologies employing tunnel-FETs

Phase change router for nonvolatile logic

Physical understanding of graphene/metal hetero-contacts to enhance MoS2 field-effect transistors performance

Proposal of a topological insulator based magnetoelectric transistor

ReRAM device performance study with Transition Metal Disulfide interfacial layer

Room temperature negative differential resistance in a GaN-based Tunneling Hot Electron Transistor

Scaling analysis of in-plane and perpendicular anisotropy magnetic tunnel junctions using a physics-based model

Surface transport and DC current gain in InGaAs/InP DHBTs for THz applications

Terahertz emission and detection in double-graphene-layer structures

The influence of NH3 plasma treatment on Al2O3/HfO2 gate dielectrics of TFTs with atmospheric pressure plasma jet deposited IGZO channel

The origin of massive nonlinearity in Mixed-Ionic-Electronic-Conduction (MIEC)-based Access Devices, as revealed by numerical device simulation

The voltage-triggered SET mechanism and self-compliance characteristics in intrinsic unipolar SiOx-based resistive switching memory

Topological surface state transport and current saturation in topological insulator nanoribbons field effect transistors

Vertical heterojunction of MoS2 and WSe2

Multi-layer MoTe2 p-channel MOSFETs with high drive current

N-polar III-nitride tunneling hot electron transfer amplifier

Reflection spectromicroscopy for the design of nanopillar optical antenna detectors

Experimental demonstration of strain-clocked Boolean nanomagnetic logic and information propagation

Atomically thin devices

What can we really expect from 2D materials for electronic applications?

Multi-valley high-field transport in 2-dimensional MoS2 transistors

Electrostatically doped WSe2 CMOS inverter

Design and analysis of MoS2-based MOSFETs for ultra-low-leakage dynamic memory applications

Correlating interface chemistry and device behavior

Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors

Improving contact resistance in MoS2 field effect transistors

Evaluating Au and Pd contacts in mono and multilayer MoS2 transistors

Wafer scalable growth and delamination of graphene for silicon heterogeneous VLSI technology

Variability of graphene mobility and contacts: Surface effects, doping and strain

Ambipolar phosphorene field-effect transistors with dielectric capping

Voltage scalability of double-gate ultra-thin-body field-effect transistors with channel materials from group IV, III-V to 2D-materials based on ITRS metrics for year 2018 and beyond

III-V FETs [Session IV.B (Corwin Pavilion East)]

III-V Gate-wrap-around field-effect-transistors with high-k gate dielectrics

In0.63Ga0.37As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at Vds = 0.5 V

RF performance of 3D III-V nanowire T-Gate HEMTs grown by VLS method

InAs gate-all-around nanowire MOSFETs by top-down approach

Nanometer InP electron devices for VLSI and THz applications

Ultra-thin-body self-aligned InGaAs MOSFETs on insulator (III-V-O-I) by a tight-pitch process

InGaAs Double-gate fin-sidewall MOSFET

Vertical electron transistors with In0.53Ga0.47As channel and N-polar In0.1Ga0.9N/GaN drain achieved by direct wafer-bonding

35 nm-Lg raised S/D In0.53Ga0.47As quantum-well MOSFETs with 81 mV/decade subthreshold swing at VDS=0.5 V

Influence of InP source/drain layers upon the DC characteristics of InAs/InGaAs MOSFETs

Growth process for high performance of InGaAs MOSFETs

CMOS devices and memory [Session V.A (Corwin Pavilion West)]

High performance flexible CMOS SOI FinFETs

Measurement and analysis of gate-induced drain leakage in short-channel strained silicon germanium-on-insulator pMOS FinFETs

Cryogenic implantation for source/drain junctions in Ge p-channel (Fin)FETs

Investigation of electrostatic body control in accumulated body MOSFETs

Exploring the design space for resistive nonvolatile memory crossbar arrays with mixed ionic-electronic-conduction (MIEC)-based Access Devices

High performance sub-430°C epitaxial silicon PIN selector for 3D RRAM

Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabricated via nanosphere lithography

Two-terminal proton conducting devices with synaptic behavior and memory

Energy and wide bandgap

Making the Mid-IR nano with epitaxial plasmonic devices

Indoor photovoltaic energy harvesting for mm-scale systems

Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers

Common emitter operation of III-N HETs using AlGaN and InGaN polarization-dipole induced barriers

Improvement of the dynamic on-resistance characteristics of GaN-on-Si power transistors with a sloped field-plate

First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors

Plenary session

Thin-film and organic

Tin disulfide (SnS2) thin-film field-effect transistors

Double-gate ZnO TFT active rectifier

Thin-film circuits for scalable interfacing between large-area electronics and CMOS ICs

Current gain of amorphous silicon thin-film transistors above the cutoff frequency

Electrostatic desalting of micro-droplets to enable novel chemical/biosensing applications

Low-power organic electronics based on gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures

Critical binding energy for exciton dissociation and its implications for the thermodynamic limit of organic photovoltaics

Air-stable, low-voltage organic transistors: High-mobility thienoacene derivatives for unipolar and complementary ring oscillators on flexible substrates

Magneto, ferro and resistive devices

SPICE models for metallic all-spin-logic devices and interconnects

Observation of resonant modes of coupled domain walls

The effect of electric field induced magnetic anisotropy in ferromagnetic resonance in magnetic tunnel junctions

The spin switch oscillator: A new approach based on gain and feedback

Feasibility analysis of high-density STTRAM designs with crossbar or shared transistor structures

Artificial synapses using ferroelectric memristors embedded with CMOS Circuit for image recognition

Detection of the conductive filament growth direction in resistive memories

71st Device Research Conference

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2006 64th Device Research Conference

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InGaAs tri-gate MOSFETs with MOVPE regrown source/drain

Content Provider	IEEE Xplore Digital Library
Author	Mishima, Y. Kanazawa, T. Kinoshita, H. Uehara, E. Miyamoto, Y.
Copyright Year	2014
Description	Author affiliation: Dept. Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan (Mishima, Y.; Kanazawa, T.; Kinoshita, H.; Uehara, E.; Miyamoto, Y.)
Abstract	InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performance of that, we propose a novel device structure which contains the superior current controllability due to the tri-gate structure and the high current drivability due to the $n^{+}-InGaAs$ source surrounding the non-planar channel. In this report, we demonstrate the source regrowth process for non-planar channel structure and current characteristics of the device fabricated by using regrowth.
Starting Page	121
Ending Page	122
File Size	311949
Page Count	2
File Format	PDF
ISBN	9781479954056
e-ISBN	9781479954063
DOI	10.1109/DRC.2014.6872327
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-22
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium gallium arsenide Logic gates MOSFET Epitaxial growth Epitaxial layers Indium phosphide
Content Type	Text
Resource Type	Article

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