NDLI: Nanomembrane β-Ga2O3 high-voltage field effect transistors

Content Provider	IEEE Xplore Digital Library
Author	Wan Sik Hwang Verma, A. Protasenko, V. Rouvimov, S. Huili Xing Seabaugh, A. Haensch, W. Van de Walle, C. Galazka, Z. Albrecht, M. Forrnari, R. Jena, D.
Copyright Year	2013
Description	Author affiliation: Mater. Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA (Van de Walle, C.) \|\| Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA (Wan Sik Hwang; Verma, A.; Protasenko, V.; Rouvimov, S.; Huili Xing; Seabaugh, A.; Jena, D.) \|\| IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA (Haensch, W.) \|\| Leibniz Inst. for Crystal Growth, Berlin, Germany (Galazka, Z.; Albrecht, M.; Forrnari, R.)
Abstract	There is considerable excitement recently in the field of transparent conducting-oxide-semiconductors due to the successful realization of large-area single crystals of the wide-bandgap semiconductor $β-Ga_{2}O_{3}$ by bulk growth methods [1]. The availability of bulk $β-Ga_{2}O_{3}$ crystals led to the rapid demonstration of high-voltage metal-semiconductor field-effect transistors (MESFETs) by controlled Sn-doped epilayers grown by molecular beam epitaxy (MBE) [2]. $β-Ga_{2}O_{3}$ has an energy bandgap of ~4.9 eV, significantly larger than both GaN and SiC. Coupled with the availability of low-cost bulk crystals, this material is highly attractive for high-voltage switching applications. Here we show preliminary results that show that similar to layered crystals [3] and rather surprisingly, one can peel-off nanoscale layers of $β-Ga_{2}O_{3}$ from a nominally undoped bulk single-crystal. Conducting channels can then be created electrostatically in these nanomembranes with a back-gate, and the resulting transistors are able to sustain very high voltages and still switch by several orders of magnitude.
Starting Page	207
Ending Page	208
File Size	518009
Page Count	2
File Format	PDF
ISBN	9781479908110
ISSN	15483770
e-ISBN	9781479908141
DOI	10.1109/DRC.2013.6633866
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Field effect transistors Crystals Photonic band gap Logic gates Optical switches
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Libarray of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
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9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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