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Content Provider | IEEE Xplore Digital Library |
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Author | Mishra, U.K. |
Copyright Year | 2004 |
Description | Author affiliation: Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA (Mishra, U.K.) |
Abstract | This work presents a summary of the use of gallium nitride and its alloys in the development of semiconductor devices. It begins with a description of the HEMT and its use in microwave and power switching applications. Then follows a brief examination of MOSHFETs, MISHFETs and MISFETs. HBTs are discussed, along with the problems of poor electronic properties of p-type GaN and leakage through p-n junctions and etched surfaces. The paper concludes by referring to the POLFET which is based on modulating a 3D electron slab created by grading the polarization in the system, resulting in a MESFET with no doping. |
Starting Page | 3 |
Ending Page | 5 |
File Size | 117259 |
Page Count | 3 |
File Format | |
ISBN | 0780382846 |
ISSN | 15483770 |
DOI | 10.1109/DRC.2004.1367754 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2004-06-21 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Gallium nitride III-V semiconductor materials Semiconductor devices Gallium alloys HEMTs Microwave devices Power semiconductor switches MOSHFETs MISFETs P-n junctions |
Content Type | Text |
Resource Type | Article |
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