NDLI: Optimization of the doping levels in doubly doped InAlAs/InGaAs HEMTs

Please wait, while we are loading the content...

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)

2003 International Symposium on Compound Semiconductors

2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498)

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors

III-V nitride-based blue LDs with modulation-doped strained-layer superlattices

Growth and doping of /spl beta/-GaN and /spl beta/-(In,Ga)N films and heterostructures

Growth and effects of single-crystalline ZnO buffer layer on GaN epitaxy

GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine

Demonstration of a GaAs-based compliant substrate using wafer bonding and substrate removal techniques

Comparison of MBE grown InSb on CU substrates using different sacrificial layers

Modeling MBE RHEED signals using PCA and neural networks

Multicomponent Sb-based solid solutions grown from Sb-rich liquid phases

Suppression of dopant redistribution in AlGaAs/GaAs laser-HEMT structures for optoelectronic transmitters grown by molecular beam epitaxy

Wavelength tunable UV laser stimulated growth of Al/sub x/Ga/sub 1-x/ by OMVPE

MBE growth of metamorphic In(Ga)AlAs buffers

Results of 3" and 4" low-gradient s.i. GaAs growth under controlled vapor pressure

Impact of growth interruption on interface roughness of MOCVD grown InGaAs/InAlAs studied by photoreflectance spectroscopy

RF sputtered Cu/sub x/Cd/sub 1-x/Te thin films: a novel semiconductor alloy

Patterned high-index substrates as templates for novel quantum-wire and dot arrays: growth and potential applications

A new self-limited growth for the fabrication of atomically uniform quantum wires and quantum dots

Fabrication of InGaAs quantum wire structures by As/sub 2/ flux in molecular beam epitaxy

Extremely high conductivities in modulation-doped GaAs and (GaIn)As quantum wells with AlAs/GaAs type-II-superlattice barriers

Fabrication of resonant interband tunneling diode using resistless lithography and selective area epitaxy

Ordered incorporation of dopants in GaAs: a new route to overcome solubility limits

Low temperature growth and characterization of silicon delta doped GaInP/GaInAs/GaAs pseudomorphic heterostructures for use in high electron mobility transistors

Optimization of group V switching times for InGaP/GaAs heterostructures grown by LP-MOCVD

Solid source molecular beam epitaxy of Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ materials for 1.3 /spl mu/m lasers

Enhanced optical crystal quality of strain-compensated InGaAs/InGaAsP quantum-well structures on GaAs substrates by the introduction of intermediate-strain layers

1.3 /spl mu/m wavelength GaInAsP/InP distributed feedback lasers grown directly on grating substrates by solid source molecular beam epitaxy

The growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition

MOCVD growth of (Ga/sub 1-x/InAs-GaAs/sub 1-y/Sb/sub y/) superlattices on InP showing type-II emission at wavelengths beyond 2 /spl mu/m

MBE growth and optical investigation of GaSb/AlSb VCSEL structures for the 1.5 /spl mu/m range

Incorporation of thallium in InTlAs and GaTlAs grown by molecular beam epitaxy

Electronic properties of MBE grown GaAs homointerfaces fabricated using the As cap deposition/removal technique

Arsenic precipitation in GaAs for single-electron tunneling applications

GaAs surface passivation with MBE grown GaS thin film

Simulation of chemical beam epitaxy with triethylgallium and tris(dimethylamino) arsine

A comprehensive atomic-level simulator for AlGaAs/GaAs [001] MBE

One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr/sub 4/ and CCl/sub 4/

Growth and characterization of thick epitaxial GaAs layers

Structural and electrical characterization of epitaxial DyP/GaAs and DyAs/GaAs grown by MBE

PIN photodiodes using nitrogen ion implantation on ZnSe/GaAs heterostructure

Band Offset Measurement Of The ZnS/Si[001] Heterojunction

(Pd, Ti, Au)-based ohmic contacts to p- and n-doped In/sub 0.53/Ga/sub 0.47/As

PtTiPtAu and PdTiPtAu ohmic contacts to p-InGaAs

Low temperature formation of low resistivity W contact with ultra thin mixed layer on molecular layer epitaxially-grown GaAs

Electrical and optical anisotropy of layered In/sub 2/Se/sub 3/ epitaxial films

Bandgap renormalization studies of n-type GaAs/AlGaAs single quantum wells

Magnetoluminescence measurement of Zeeman and exchange interactions of excitons in GaAs/AlGaAs multiple quantum wells

Lateral confinement and inter-wire coupling of exciton in 4-16 nm wide GaAs/AlGaAs quantum wires observed by magnetoluminescence

Extremely sharp Er-related luminescence in Er-doped GaP grown by OMVPE with TBP

Trap-mediated, site-selective excitation of photoluminescence from multiple Er/sup 3+/ sites in Er-implanted GaN

Gain spectra measurement of InGaAsP/AlGaAs laser structures for wavelengths near 800 nm using a new variable stripe length method

Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate

Temperature dependence of photoluminescence in Mg-doped GaN epilayers grown by MOCVD

Impact of GaN buffer growth conditions on photoluminescence and X-ray diffraction characteristics of MOVPE grown bulk GaN

X-ray photoelectron diffraction study of hexagonal GaN(0001) thin films

Energy gap bowing and refractive index spectrum of AlInN and AlGaInN

Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

Optical transitions and dynamic processes in III-nitride epilayers and multiple quantum wells

On the nature of radiative recombination processes in GaN

STM imaging of Be delta doped layers in GaAs

Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy

Structural and device properties of DFB-LD with lateral undulation of SL-MQW

XSTM characterization of GaSb/InAs heterojunctions: observation of white noise in the interface roughness spectrum

Monolayer scale analysis of ZnSe/GaAs heterointerface structures by X-ray CTR scattering and interference

Ballistic electron transport in semiconductor superlattices

Photoluminescence from GaN implanted with isoelectronic phosphorus and bismuth

Magnetoresistance and cyclotron mass in extremely-coupled double quantum wells under in-plane magnetic fields

Band offsets in near-GaAs alloys

Time-resolved photoluminescence of ZnS/sub x/Se/sub 1-x/(0

Whole wafer characterization of large size GaAs-AlGaAs semiconductor materials prepared by MOCVD TurboDisc/sup TM/ technology

Structural and optical properties of very high quality GaAs/AlGaAs multiple quantum well structures grown on (111)A substrates by MOVPE

Study of photoexcited carriers in semi-insulating InP by means of Raman spectroscopy

Photocapacitance investigation of stoichiometry-dependent deep levels in InP

Photoconduction studies on InGaAs HEMTs

Hydrogenation effect of InGaP grown on GaAs by molecular beam epitaxy

Fourier transform infrared spectroscopy (FTIR), SIMS and Raman scattering of heavily carbon doped MOCVD grown In/sub 0.53/Ga/sub 0.47/As

Raman spectroscopy of InAs/sub 1-x/Sb/sub x//InSb and InAs/sub 1-x/Sb/sub x//InAs superlattices, under hydrostatic pressure

Growth of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs

Kinetics of AlAs steam oxidation at low pressure and low temperature measured in-situ using a novel furnace design with an integral optical port

Localized intermixing of AlAs and GaAs layers for lithographic control of the lateral oxidation of AlAs

Improved PL intensity of InGaAs/GaAs SQW with a selectively oxidized AlAs layer

In-situ monitoring of the selective etching of antimonides in GaSb/AlSb/InAs heterostructures using Raman spectroscopy

Low frequency noise in dry and wet etched InAlAs/InGaAs HEMTs

Fabrication of integrated twin-guide corner reflector surface-emitting lasers with reactive ion-beam etching

Selective and non-selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

Focused ion beam assisted ohmic metallizations to p-6H-SiC

Silicon carbide power MOSFET technology

1000 V 4H-SiC gate turn off (GTO) thyristor

MOCVD growth of InGaN multiple quantum well LEDs and laser diodes

ECR-MBE growth and high excitation properties of GaInN/GaN heterostructures

Optical metastability in InGaN/GaN heterostructures

Carrier transport mechanisms in organic electroluminescent devices

Monolithic integration of a GaInAs PIN photodiode and AlGaAs/GaAs/AlGaAs HEMTs on GaAs substrate

Ion implanted GaAs/InGaAs lateral injection ridge QW laser for OEICs: study of operation mechanisms

Avalanche multiplication in sub-micron Al/sub x/Ga/sub 1-x/As/GaAs heterostructures

MBE growth of near-infrared InGaAs photodetectors with carbon tetrabromide as a p-type dopant

Studies of the effects of multi-stack multiquantum barrier on the properties of 1.3 /spl mu/m AlGaInAs/InP quantum well lasers

Characteristics of native-oxide confined InGaP/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P quantum well visible laser diodes

InGaAs/InP p-i-n heterostructure photodiode arrays on AlGaAs/GaAs waveguide films by solid source molecular beam epitaxy

Reduced radiative currents from GaAs/InGaAs and AlGaAs/GaAs p-i-n quantum well devices

The influence of internal mechanical stresses on the GaAs-light-emitting diodes

Wide bandgap semiconductor RF power devices

High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts

AlGaN/GaN MODFETs with low ohmic contact resistances by source/drain n/sup +/ re-growth

Wide bandgap collectors in GaInP/GaAs heterojunction bipolar transistors with increased breakdown voltage

Improved high frequency performance by composite emitter AlGaAs/GaInP heterojunction bipolar transistors fabricated using chemical beam epitaxy

Saturation charge storage measurements in GaInP/GaAs/GaAs and GaInP/GaAs/GaInP HBTs

Low-frequency noise characterization of high- and low-reliability AlGaAs/GaAs single HBTs

High gain AlGaAs/GaAs HBTs grown by MOCVD

Pd/Ge-based ohmic contacts to n-InGaAs and n-GaAs for heterojunction bipolar transistors

An Au/Pt/Ti/WN/sub x/ ohmic contact to n-InGaAs and its application to AlGaAs/GaAs HBTs

Real space transfer noise of GaAs p-HEMTs

PdGe on GaAs: A study of the applicability in InGaP/GaAs HBT fabrication

An investigation of breakdown in power HEMTs and MESFETs utilising an advanced temperature-dependent physical model

Ultra-linear pseudomorphic HEMTs for wireless communications: A simulation study

GaAs homojunction phototransistor with minority carrier transport assisted by photo-generated carrier profile in the base

Metamorphic HFETs with composite In/sub 0.8/Ga/sub 0.2/As/InAs/In/sub 0.8/Ga/sub 0.2/As channels on GaAs substrate

A novel high-performance WSi-gate self-aligned N-AlGaAs/InGaAs/N-AlGaAs pseudomorphic double heterojunction MODFET by ion implantation

Novel applications of HEMTs for future 4.2 K low-power and low-frequency cryoelectronics

Influence of backside doping on the nonlinear capacitances of a PHEMT affecting the VCO frequency characteristics

Photoinduced instability in microwave excited GaAs MESFETs

Optimization of the doping levels in doubly doped InAlAs/InGaAs HEMTs

500/spl deg/C operation of GaAs based HFET containing low temperature grown GaAs and AlGaAs

Ultra low power (<2 mW) noise performance of InGaP/GaAs HBT

DHBT/RTD-based active frequency multiplier for wireless communications

Optical and microscopic properties of In/sub 0.5/Ga/sub 0.5/As/GaAs highly strained heterostructures

Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots

Positioning of InAs quantum dots on sub-250 nm facets using selective area epitaxy

Increased surface ordering of InAs island arrays using a multidot column subsurface structure

Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures

Electronic states in quantum dots: effects of symmetry of the confining potential

Fabry-Perot and vertical cavity surface emitting InAs quantum dot lasers

Microcavity lasers: emission from a fully confined photon state

Subband structure of GaAs coupled quantum wires on V-grooved substrate

Micromachined tunable vertical cavity lasers as wavelength selective tunable photodetectors

Characterization of GaAs/AlGaAs mid-infrared emitters

Multi-staged, InAsSb mid-infrared lasers and light-emitting diodes, grown by MOCVD

GaP-Al/sub x/Ga/sub 1-x/P waveguide Raman lasers and amplifiers for optical communication

Atomic force microscope nanoscale lithography for single-electron device applications

Comparison of the effects of different lateral boundary conditions on transport in resonant tunneling diodes

Model of intra and extracavity photodetection for planar resonant cavity light emitting diodes

Photoluminescence study of the self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy

Resonant interband tunneling through multiple subbands in an InAs/AlSb/GaSb interband tunneling structure

Quasi one-dimensional confinement in double-well sidewall gated resonant tunneling transistors

Ultralow current density RTDs for tunneling-based SRAM

Analysis of heterojunction interband tunneling diodes for MMICs

Microwave noise properties for resonant tunneling transistors (RTTs)

Photoluminescence study of resonant-tunneling transistor

Resonant tunneling in disordered materials such as SiO/sub 2//Si/SiO/sub 2/

Semi-insulating GaAs by controlled introduction of metallic nano-Schottkies

Comprehensive simulation of quantum well lasers

Monte Carlo estimation of excess noise factor in thin p/sup +/-i-n/sup +/ avalanche photodiodes

Numerical model of a 0.2 /spl mu/m AlGaAs/GaAs HEMT including electromagnetic effects

NEMO: general release of a new comprehensive quantum device simulator

Atomic scale calculations for strain distribution and electronic structure of InAs pyramidal quantum dots on (100) GaAs

Two-dimensional device simulation for PHEMT material and process control

Optimization of the doping levels in doubly doped InAlAs/InGaAs HEMTs

Content Provider	IEEE Xplore Digital Library
Author	Kraus, S. Sexl, M. Bohm, G. Trankle, G. Weimann, G.
Copyright Year	1998
Description	Author affiliation: Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany (Kraus, S.)
Abstract	Delta-doped InAlAs/InGaAs-HEMTs were grown by MBE, lattice matched on InP-substrates. The ratio of upper doping to lower doping was varied from 1:0, 4:1, 2:1, 1:1 to 0:1, while total doping concentration was kept constant. By increasing the bottom doping concentration, the drain current is increased and the kink effect reduced. Ultimately the inversely doped transistor shows absolutely no kink and a very low output conductance of 25 mS/mm. These new results offer a better understanding of the kink effect, related to the band structure of the HEMTs and its dependence on doping.
Starting Page	503
Ending Page	506
File Size	263401
Page Count	4
File Format	PDF
ISBN	0750305568
DOI	10.1109/ISCS.1998.711725
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-09-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Doping Indium compounds Indium gallium arsenide HEMTs MODFETs Charge carrier density Electrons Indium phosphide Substrates Etching
Content Type	Text
Resource Type	Article

Central Library (ISO-9001:2015 Certified)
Indian Institute of Technology Kharagpur
Kharagpur, West Bengal, India | PIN - 721302

See location in the Map
03222 282435
Mail: support@ndl.gov.in

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in