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Content Provider | IEEE Xplore Digital Library |
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Author | Palmisano, G. Espinosa, F.V.G. Montecchi, F. |
Copyright Year | 1989 |
Description | Author affiliation: Dept. of Electron., Pavia Univ., Italy (Palmisano, G.; Espinosa, F.V.G.; Montecchi, F.) |
Abstract | Four pseudo-N-path switched capacitor (SC) cells are compared with regard to finite op amp gain and gain-bandwidth ratio. The results show that a three-path RAM-type cell displays the best performance with respect to the other cells studied. Unfortunately, the RAM-type cell is affected by clock-feedthrough noise, which can limit drastically its field of application. Some improvement can be achieved using fully differential techniques. Clock-feedthrough-free operation is typical for circulating-delay-type designs, but they are much more affected by op amp nonidealities than RAM-type designs. Therefore, in applications where the signal-to-noise ratio is a critical filter requirement, the RAM-type cell based on the z to -z/sup N/ transformation can be used, since it is fully immune to clock-feedthrough noise and gives a sensitivity performance just slightly higher than that of the three-path RAM-type cell.< |
Starting Page | 1467 |
Ending Page | 1470 |
File Size | 248847 |
Page Count | 4 |
File Format | |
DOI | 10.1109/ISCAS.1989.100634 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 1989-05-08 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Operational amplifiers Capacitors Band pass filters Clocks Circuit topology Delay Active filters Frequency Circuit noise Narrowband |
Content Type | Text |
Resource Type | Article |
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