NDLI: 10kV SiC-based isolated DC-DC converter for medium voltage-connected Solid-State Transformers

Content Provider	IEEE Xplore Digital Library
Author	Rothmund, D. Ortiz, G. Guillod, T. Kolar, J.W.
Copyright Year	2015
Description	Author affiliation: Power Electron. Syst. Lab., ETH Zurich, Zurich, Switzerland (Rothmund, D.; Ortiz, G.; Guillod, T.; Kolar, J.W.)
Abstract	Silicon-carbide semiconductor technology offers the possibility to synthesize power devices with unprecedented blocking voltage capabilities while achieving outstanding switching and conduction performances. Accordingly, this new semiconductor technology is especially interesting for Solid-State Transformer concepts and is utilized in this paper for designing a 25 kW/50 kHz prototype based on 10 kV SiC devices, featuring a 400V DC output. The focus is on the DC-DC converter stage while special attention is placed on the large step-down medium frequency transformer, whereby the impact of the rather high operating frequency and high number of turns with respect to the transformer's resonance frequency is analyzed This leads to useful scaling laws for the resonance frequency of transformers in dependence of the operating frequency and construction parameters. Finally, a transformer prototype and efficiency and power density values for the DC-DC stage are presented.
Starting Page	1096
Ending Page	1103
File Size	2123384
Page Count	8
File Format	PDF
ISBN	9781479967353
DOI	10.1109/APEC.2015.7104485
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-03-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resonant frequency Windings DC-DC power converters Inductance Transformer cores Switches Silicon carbide
Content Type	Text
Resource Type	Article

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