NDLI: Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates

Content Provider	IEEE Xplore Digital Library
Author	Ching-Hsueh Chiu Po-Min Tu Chien-Chung Lin Da-Wei Lin Zhen-Yu Li Kai-Lin Chuang Jet-Rung Chang Tien-Chang Lu Hsiao-Wen Zan Chiang-Yao Chen Hao-Chung Kuo Shing-Chung Wang Chun-Yen Chang
Copyright Year	1995
Abstract	We presented a study of high-performance GaN-based light emitting diodes (LEDs) using a GaN nanopillars (NPs) structure grown on sapphire substrate by integrating RF-plasma molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Nanoscale air voids were clearly observed at the interface between GaN NPs and the overgrown GaN layer by cross-sectional scanning electron microscopy. It can increase the light-extraction efficiency due to additional light scattering. The transmission electron microscopy images suggest the air voids between GaN NPs introduced during nanoscale epitaxial lateral overgrowth of GaN can suppress the threading dislocation density. Moreover, Raman spectrum demonstrated that the strain of the GaN layer grown on GaN NPs was effectively eliminated, resulting in the reduction of quantum-confined Stark effect in InGaN/GaN quantum wells. Consequently, the LEDs fabricated on the GaN NPs template exhibit smaller electroluminescent peak wavelength blue shift and great enhancement of the light output (70% at 20 mA) compared with the conventional LEDs.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	971
Ending Page	978
Page Count	8
File Size	925877
File Format	PDF
ISSN	1077260X
Volume Number	17
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Light emitting diodes Substrates Epitaxial layers Molecular beam epitaxial growth Temperature measurement quantum-confined Stark effect (QCSE) Light emitting diodes (LEDs) metal–organic chemical vapor deposition (MOCVD) molecular beam epitaxy (MBE)
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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