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Content Provider | IEEE Xplore Digital Library |
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Author | Houfang Liu Qinli Ma Rizwan, S. Dongping Liu Shouguo Wang Xiufeng Han |
Copyright Year | 1965 |
Abstract | Magnetic tunnel junctions (MTJs) with the core structure of CoFeB/MgAlOx/CoFeB were fabricated using magnetron sputtering technique. The MgAlOx tunnel barrier was obtained by plasma oxidation of an Mg/Al bilayer in an Ar+O2 atmosphere. Series of MTJs were fabricated with different Mg layer thicknesses (tMg), and Al layer thickness was fixed at 1.3 nm. The annealing effect on the tunneling magnetoresistance (TMR) ratio was investigated, and TMR ratio of 65% at room temperature (RT) was shown when it was annealed at 375 °C with the tMg=0.5 nm. The temperature dependence of conductance can be fit by the magnon-assisted tunneling model by adding spin independent tunneling contribution for the samples investigated here, and the spin independent conductance GSI varies with tMg, possibly due to less oxidation for thicker Mg layer. |
Sponsorship | IEEE Magnetics Society |
Starting Page | 2716 |
Ending Page | 2719 |
Page Count | 4 |
File Size | 387229 |
File Format | |
ISSN | 00189464 |
Volume Number | 47 |
Issue Number | 10 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2011-10-01 |
Publisher Place | U.S.A. |
Access Restriction | One Nation One Subscription (ONOS) |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Magnetic tunneling Junctions Tunneling magnetoresistance Annealing Iron tunneling magnetoresistance Bias voltage spin dependent tunneling spin independent tunneling |
Content Type | Text |
Resource Type | Article |
Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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