NDLI: Improved selectivity of synthetic anti-ferromagnetic free Layer in high-density MRAM array

Content Provider	IEEE Xplore Digital Library
Author	Injun Hwang Woncheol Jeong Jaehyun Park Wanjun Park Jang, Y. Youngjin Cho Soonwon Hwang Rhee, J. Taewan Kim
Copyright Year	1965
Abstract	We investigate switching characteristics of the patterned submicrometer magnetic tunnel junction (MTJ) cells incorporating with a NiFe single and a synthetic anti-ferromagnetic (SAF) as a free layer. The MTJs with single NiFe free layer show the increased probability of vortex appearance with increase of NiFe thickness. Even though the free layer thickness is decreased, single NiFe free layer shows large variation of switching field. However, the employment of the SAF free layer dramatically improves switching characteristics with the suppression of vortex states and single domain-like tendency.
Sponsorship	IEEE Magnetics Society
Starting Page	2673
Ending Page	2675
Page Count	3
File Size	189118
File Format	PDF
ISSN	00189464
Volume Number	41
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Antiferromagnetic materials Magnetic tunneling Magnetic field measurement Magnetic anisotropy Perpendicular magnetic anisotropy Magnetic separation Remanence Magnetic switching Magnetic films Magnetoresistance vortex Magnetic tunnel junction MRAM remanence SAF free layer selectivity
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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