NDLI: Fabrication of ultrasmall tunnel junctions by electron beam direct-writing

Content Provider	IEEE Xplore Digital Library
Author	Born, D. Wagner, T. Krech, W. Hubner, U. Fritzsch, L.
Copyright Year	2002
Abstract	Fabrication of miniaturized tunnel junctions based on high-melting metals by the shadow evaporation technique is rather complicated. The thermal load of the suspended bridge mask during metal evaporation is assumed to be the most serious problem. As an alternative we have developed a preparation technique using e-beam direct-writing lithography in conjunction with material deposition by sputtering. To test the preparation process, we have fabricated single electron transistors (SETs) based on the metals Al and Nb, including mixed Al/Nb samples. For SETs made completely of Nb, we preferred Al0/sub x/ to the natural oxide NbO/sub x/ for barrier generation. The yield of functioning samples amounted to about 80%. By means of simple considerations we have estimated the tunnel capacitances to be of the order of a few 10/sup -16/ F, the tunnel resistance spread was less than one order of magnitude.
Sponsorship	Council on Superconductivity Appl. Superconductivity Conference Inc MIT
Starting Page	373
Ending Page	376
Page Count	4
File Size	488191
File Format	PDF
ISSN	10518223
Volume Number	11
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Electron beams Thermal loading Bridges Lithography Sputtering Testing Single electron transistors Niobium compounds Capacitance
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Fabrication of tunnel junctions for direct detector arrays with single-electron transistor readout using electron-beam lithography

S-N-S weaklink junctions fabricated by nanometer lithography

Quick and Clean: Stencil Lithography for Wafer-Scale Fabrication of Superconducting Tunnel Junctions

Fabrication of sub-micron whole-wafer SIS tunnel junctions for millimeter wave mixers

Three terminal, non-equilibrium quasiparticle device experiments with submicron tunnel junctions

Superconducting tunnel junction structures designed for qubit realizations

Single-electron transistors based on Al/AlO/sub x//Al and Nb/AlO/sub x//Nb tunnel junctions

NbN tunnel junctions

Single Electron Transistor Fabrication using Focused Ion Beam direct write technique

Fabrication of ultrasmall tunnel junctions by electron beam direct-writing

Similar Documents

Fabrication of tunnel junctions for direct detector arrays with single-electron transistor readout using electron-beam lithography

S-N-S weaklink junctions fabricated by nanometer lithography

Quick and Clean: Stencil Lithography for Wafer-Scale Fabrication of Superconducting Tunnel Junctions

Fabrication of sub-micron whole-wafer SIS tunnel junctions for millimeter wave mixers

Three terminal, non-equilibrium quasiparticle device experiments with submicron tunnel junctions

Superconducting tunnel junction structures designed for qubit realizations

Single-electron transistors based on Al/AlO/sub x//Al and Nb/AlO/sub x//Nb tunnel junctions

NbN tunnel junctions

Single Electron Transistor Fabrication using Focused Ion Beam direct write technique

Fabrication of ultrasmall tunnel junctions by electron beam direct-writing