NDLI: Annealing behavior of magnetic anisotropy in CoNbZr films

Content Provider	IEEE Xplore Digital Library
Author	Miura, M. Katahashi, H. Muramori, K. Kajiyama, M.
Copyright Year	1965
Abstract	The effect of magnetic and nonmagnetic annealing on the magnetic anisotropy in CoNbZr films, formed by a DC opposing-targets sputtering method, was investigated. It was revealed that the origin of the magnetic anisotropy is the directional ordering of the magnetic atoms. The anisotropy fields and the direction of the easy axis obtained when the films are annealed in zero magnetic field are almost the same as those for the magnetic field parallel to the easy axis of the as-deposited films. When the films are annealed in a magnetic field perpendicular to the easy axis, the anisotropy field induced in parallel with the magnetic field, H/sub k/(t), is well represented by the following formula: ln (1-H/sub k/(t)/H/sub k/( infinity ) varies as - square root Tt, where H/sub k/( infinity ) is the thermal equilibrium value of the anisotropy field and D is the diffusion constant. The activation energy of the as-deposited film is 0.86 eV. Annealing the film increases the activation energy which is 2.1 eV when the film is annealed at a temperature of 450 degrees C for 2 h.<>
Sponsorship	IEEE Magnetics Society
Starting Page	2215
Ending Page	2220
Page Count	6
File Size	509094
File Format	PDF
ISSN	00189464
Volume Number	24
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Magnetic anisotropy Magnetic films Perpendicular magnetic anisotropy Saturation magnetization Anisotropic magnetoresistance Magnetostriction Magnetic flux Sputtering Amorphous magnetic materials
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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