NDLI: Effect of the Collector Design on the IGBT Avalanche Ruggedness: A Comparative Analysis Between Punch-Through and Field-Stop Devices

Content Provider	IEEE Xplore Digital Library
Author	Spirito, P. Maresca, L. Riccio, M. Breglio, G. Irace, A. Napoli, E.
Copyright Year	1963
Abstract	In this paper, we investigate the effect of collector design on the onset and the extension of the negative differential resistance (NDR) region that develops in the blocking curves of field-stop (FS) and punch-through (PT) insulated gate bipolar transistors. Differences on the NDR extension and on its temperature behavior for the PT structures with respect to the FS ones are found, and their dependence from the collector design is explained. Subsequently, the dynamic filamentary current conduction mechanism is studied by means of 2-D electrothermal simulations on a wide area structure with many elementary cells on PT and FS devices. The differences between the two structures in terms of filament movement and its influence on the max temperature of the hot spot are then demonstrated to adversely affect the ruggedness of PT devices compared with the FS ones.
Sponsorship	IEEE Electron Devices Society
Starting Page	2535
Ending Page	2541
Page Count	7
File Size	1654789
File Format	PDF
ISSN	00189383
Volume Number	62
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Buffer layers Temperature dependence Transistors Current density Isothermal processes Temperature distribution negative resistance region. Avalanche ruggedness current filamentation insulated gate bipolar transistor (IGBT) design negative resistance region
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials

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