NDLI: Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVD

Content Provider	IEEE Xplore Digital Library
Author	Zhao Jun Liu Tongde Huang Jun Ma Chao Liu Kei May Lau
Copyright Year	1980
Abstract	Monolithic integration of high-performance AlGaN/GaN high-electron mobility transistors (HEMTs) and blue light emitting diodes (LEDs) on sapphire substrates has been demonstrated by metal organic chemical vapor deposition selective growth technique. The integrated HEMT-LED exhibits a peak transconductance (Gm) of 244 mS/mm, a maximum drain current (Id) of 920 mA/mm, and an ON-resistance (Ron) of 2.6 Ω·mm. The forward voltage (VF) of the LED is 3.1 V under an injection current of 10 mA. The integrated LED emits modulated light power efficiently at a wavelength of 470 nm by a serially connected GaN HEMT, showing potential applications such as solid-state lighting, displays, and visible light communications.
Sponsorship	IEEE Electron Devices Society
Starting Page	330
Ending Page	332
Page Count	3
File Size	536076
File Format	PDF
ISSN	07413106
Volume Number	35
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	HEMTs Light emitting diodes Gallium nitride Aluminum gallium nitride Logic gates Substrates MOCVD metal organic chemical vapor deposition (MOCVD) AlGaN/GaN high electron mobility transistor (HEMT) light emitting diode (LED)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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