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Content Provider | IEEE Xplore Digital Library |
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Author | Guofeng Yang Guohua Li Shumei Gao Dawei Yan Fuxue Wang |
Copyright Year | 1989 |
Abstract | The N-face blue InGaN/GaN light-emitting diodes (LEDs) with specific design of p-type InGaN/GaN superlattice (SL) are investigated numerically, and the Ga-face LED with the same structure is simultaneously simulated for comparison. The proposed N-face LED with p-InGaN/GaN SL exhibits significant improvement for the light output power and carrier injection efficiency when the applied voltage surpasses certain value compared with the Ga-face LED with p-InGaN/GaN SL. The enhanced performance for N-face LED is explained by the simulated energy band diagrams, distribution of electric field, carrier concentration, and radiative recombination rate in the quantum wells. |
Sponsorship | IEEE Lasers and Electro-Optics Society |
Starting Page | 2369 |
Ending Page | 2372 |
Page Count | 4 |
File Size | 650445 |
File Format | |
ISSN | 10411135 |
Volume Number | 25 |
Issue Number | 23 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2013-01-01 |
Publisher Place | U.S.A. |
Access Restriction | One Nation One Subscription (ONOS) |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Light emitting diodes Gallium nitride Superlattices Aluminum gallium nitride Radiative recombination Electric fields Power generation InGaN/GaN superlattice N-face light-emitting diodes numerical study |
Content Type | Text |
Resource Type | Article |
Subject | Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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