NDLI: Light Extraction Enhancement of a GaN-Based Light-Emitting Diode Through Grating-Patterned Photoelectrochemical Surface Etching With Phase Mask Interferometry

Content Provider	IEEE Xplore Digital Library
Author	Cheng-Hung Lin Cheng-Yen Chen Dong-Ming Yeh Chih-Chung Yang
Copyright Year	1989
Abstract	The enhancement of light extraction by fabricating a surface grating structure around the mesa of a light-emitting diode (LED) with an approach combining photoelectrochemical (PEC) wet etching and phase mask interferometry is demonstrated. The PEC etching rate is controlled by the intensity of illuminating UV light, which is spatially modulated by the fringe pattern of phase mask interferometry, for forming the grating structure. Without affecting the resistance characteristics of the device, the diffraction of such a grating structure leads to LED output enhancement by > 43% on either the top or bottom side.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	640
Ending Page	642
Page Count	3
File Size	386759
File Format	PDF
ISSN	10411135
Volume Number	22
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Light emitting diodes Gratings Optical interferometry Wet etching Rough surfaces Surface roughness Diffraction Holography Mass production Dry etching photoelectrochemical (PEC) etching Light-emitting diode (LED) light extraction
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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