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Content Provider | IEEE Xplore Digital Library |
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Author | Sung-Jin Choi Jin-Woo Han Sungho Kim Moon-Gyu Jang Jin Soo Kim Kwang Hee Kim Gi Sung Lee Jae Sub Oh Myeong Ho Song Yun Chang Park Jeoung Woo Kim Yang-Kyu Choi |
Copyright Year | 1980 |
Abstract | A dopant-segregated (DS) Schottky-barrier (DSSB) FinFET SONOS for NAND flash memory with a proposed architecture is demonstrated for the first time. A DSSB technique with a nickel-silicided source/drain (S/D) is integrated in the FinFET with a 30-50-nm range of fin width. Compared with the conventional FinFET SONOS, the DSSB FinFET SONOS boasts very fast programming time with low voltage. For a programming state, hot electrons triggered by sharp band bending at the DS S/D region are used. As a result, a threshold voltage (V th) shift of 4.5 V is achieved in a fast programming time of 100 ns. |
Sponsorship | IEEE Electron Devices Society |
Starting Page | 78 |
Ending Page | 81 |
Page Count | 4 |
File Size | 553892 |
File Format | |
ISSN | 07413106 |
Volume Number | 30 |
Issue Number | 1 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2009-01-01 |
Publisher Place | U.S.A. |
Access Restriction | One Nation One Subscription (ONOS) |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Decision support systems FinFETs SONOS devices Electrons Flash memory Nonvolatile memory Low voltage Threshold voltage MOSFET circuits Nanoscale devices SONOS memory Dopant segregated (DS) FinFET hot electrons NAND Flash nonvolatile memory Schottky-barrier MOSFET silicon–oxide–nitride–oxide–silicon (SONOS) |
Content Type | Text |
Resource Type | Article |
Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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