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Content Provider | IEEE Xplore Digital Library |
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Author | Chee-Loon Tan Yang Wang Djie, H.S. Boon-Siew Ooi |
Copyright Year | 1965 |
Abstract | This paper presents a theoretical model to explain the quasi-supercontinuum interband emission from InGaAs/GaAs self-assembled semiconductor quantum dot lasers by accounting for both inhomogeneous and homogeneous optical gain broadening. The experimental and theoretical agreement of a room temperature (293 K) broadband laser emission confirms the presence of multiple-state lasing actions in highly inhomogeneous dot ensembles. The corresponding full-width half-maximum of the photoluminescence is 76 meV as opposed to those wideband lasing coverage at only low temperature (~60 K) from typical quantum dot lasers. A newly proposed change of homogeneous broadening with injection that occurs only in highly inhomogeneous quantum dot system is critical to account for the continuous wideband lasing but not the conventional ideas of carrier dynamics in semiconductor lasers. In addition, the analysis of threshold conditions reveals that broadband lasing only occurs when the energy spacing between quantized energy states is comparable to the inhomogeneous broadening of quantum-dot nanostructures. The study is important in providing a picture of this novel device and realization of broad lasing coverage for diverse applications, especially in the research field of short-pulse generation and ultra-fast phenomena in semiconductor quantum-dot laser. |
Sponsorship | IEEE Lasers and Electro-Optics Society |
Starting Page | 1168 |
Ending Page | 1176 |
Page Count | 9 |
File Size | 894442 |
File Format | |
ISSN | 00189197 |
Volume Number | 45 |
Issue Number | 9 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2009-09-01 |
Publisher Place | U.S.A. |
Access Restriction | One Nation One Subscription (ONOS) |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Quantum dot lasers Spectral analysis Semiconductor lasers Laser theory Laser modes Temperature Wideband Indium gallium arsenide Gallium arsenide Quantum mechanics homogeneous broadening Semiconductor laser self-assembled quantum dot supercontinuum optical gain broadening broadband laser inhomogeneous broadening |
Content Type | Text |
Resource Type | Article |
Subject | Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering |
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