NDLI: A 6,13-bis(Triisopropylsilylethynyl) Pentacene Thin-Film Transistor Using a Spun-On Inorganic Gate-Dielectric

Content Provider	IEEE Xplore Digital Library
Author	Jae-Hong Kwon Jung-Hoon Seo Sang-Il Shin Kyung-Hwan Kim Dong Hoon Choi In Byeong Kang Hochul Kang Byeong-Kwon Ju
Copyright Year	1963
Abstract	We present the latest results of the use of soluble materials such as organic semiconductors (OSCs) or gate-dielectrics for simplified processing of organic thin-film transistors (OTFTs). In this paper, we described our fabrication of a solution-processed OTFT with 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the OSC and siloxane-based spin-on glass (SOG) as the inorganic gate-dielectric. Also, synthesized TIPS-pentacene and SOG were examined for use as the OSC and gate-dielectric in an OTFT. From electrical measurements, we obtained device performance characteristics such as charge carrier mobility, threshold voltage, current ON/OFF ratio, and subthreshold swing, which were 6.48 times 10^-3 cm²/V ldr s, -13 V, ~100, and 1.83 V/dec, respectively.
Sponsorship	IEEE Electron Devices Society
Starting Page	500
Ending Page	505
Page Count	6
File Size	622246
File Format	PDF
ISSN	00189383
Volume Number	55
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Organic thin film transistors Logic gates Silicon Pentacene Surface roughness Rough surfaces spin-on glass 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene) organic electronics organic thin-film transistor (OTFT)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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