NDLI: High Voltage Pulsed Power Supply Using IGBT Stacks

Content Provider	IEEE Xplore Digital Library
Author	Jong-Hyun Kim Byung-Duk Min Shenderey, S.V. Geun-Hie Rim
Copyright Year	1994
Abstract	High voltage pulsed power supply using IGBT (insulated gate bipolar transistor) stacks and pulse transformer for plasma source ion implantation is proposed. To increase voltage rating, twelve IGBTs are used in series at each IGBT stack and a step-up pulse transformer is utilized. To increase the current rating, the proposed system makes use of synchronized three pulse generator modules composed of diodes, capacitors and IGBT stacks. The proposed pulsed power supply uses semiconductor switches as main switches. Hence, the system is compact, and has semi-infinite lifetime. In addition, it has high flexibility in parameters such as voltage magnitude (10-60 kV), pulse repetition rate (PRR) (10-2000 pps), and pulse width (2-5 muS).
Sponsorship	National Natural Science Foundation of China (NSFC) Region Centre Ville de Tours Conseil General D'Indre et Loire ABB IEEE Sandia National Laboratories TOSHIBA
File Size	704834
File Format	PDF
ISSN	10709878
Volume Number	14
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Pulsed power supplies Voltage Insulated gate bipolar transistors Pulse transformers Power semiconductor switches Space vector pulse width modulation Plasma sources Ion implantation Pulse generation Semiconductor diodes
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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