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Content Provider | IEEE Xplore Digital Library |
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Author | Cheong Min Hong Wagner, S. |
Copyright Year | 1980 |
Abstract | Source/drain metallization to amorphous silicon thin-film transistors has been made by inkjet printing. Contact pads of a metal organic copper precursor were inkjet printed, and then converted to copper metal at a maximum process temperature of 200/spl deg/C. The copper contacts were used as the mask for back-channel etch. Laser printed toner was used for all other mask levels in a photoresist-free fabrication process. The inkjet printing of copper contacts represents a further step toward an all-printed thin-film transistor technology. |
Sponsorship | IEEE Electron Devices Society |
Starting Page | 384 |
Ending Page | 386 |
Page Count | 3 |
File Size | 92597 |
File Format | |
ISSN | 07413106 |
Volume Number | 21 |
Issue Number | 8 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2000-08-01 |
Publisher Place | U.S.A. |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Copper Amorphous silicon Thin film transistors Printing Temperature Etching Semiconductor materials Fabrication Integrated circuit metallization Organic materials |
Content Type | Text |
Resource Type | Article |
Subject | Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials |
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