NDLI: MOVPE-grown millimeter-wave InGaAs mixer diode technology and characteristics

Content Provider	IEEE Xplore Digital Library
Author	Marsh, P. Pavlidis, D. Hong, K.
Copyright Year	1963
Abstract	The merits of InGaAs-based millimeter-wave mixer diodes are explored experimentally and theoretically. Schottky junctions on InGaAs exhibit barriers (/spl phi//sub b/) in the neighborhood of 0.25 eV. The high mobility of InGaAs contributes to the low n/sup +/ sheet resistances of 1.9-5 /spl Omega//square for 1-/spl mu/m n/sup +/ InGaAs layers (n/sub s/=1.5/spl times/10/sup 19/ cm/sup -3/, /spl mu//sub n/=1800 cm/sup 2//V/spl middot/s) grown with our in-house Metalorganic Vapor Phase Epitaxy (MOVPE) system, The design, material growth, fabrication, and characterization of InGaAs integrated mixer/antennae are reported. Pt plating technology, adapted here for InGaAs Schottky contacts, has improved the ideality factor (/spl eta/) and yield relative to conventional evaporated Pt. With 810 /spl mu/W of local oscillator power, applied to the diode, and zero DC bias, an integrated InGaAs mixer/antenna demonstrated an excellent diode performance of 199 K RF input double-sideband noise temperature with a corresponding single-sideband (SSB) conversion loss (L/sub c/) of 5.0 dB at LO, RF, and IF frequencies of 94 GHz, 94 GHz/spl plusmn/1.4 GHz, and 1.4 GHz, respectively. Likewise, the diodes in an InGaAs subharmonic integrated mixer/antenna demonstrated an equivalent RF-port double-sideband (DSB) noise temperature (T/sub mix/) of 1058 K and single-sideband conversion loss of 10.2 dB at 180 GHz with a 90-GHz LO power (PLO) of 1.6 mW. Compared to GaAs diodes with RF coupling and IF losses removed, the single-ended InGaAs noise temperature results were within 46-100 K of those for state-of-the-art GaAs mixer diodes while requiring significantly less LO power.
Sponsorship	IEEE Electron Devices Society
Starting Page	1066
Ending Page	1075
Page Count	10
File Size	384021
File Format	PDF
ISSN	00189383
Volume Number	44
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Millimeter wave technology Indium gallium arsenide Schottky diodes Radio frequency Temperature Epitaxial growth Mixers Gallium arsenide Epitaxial layers Inorganic materials
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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